Format:
XXIV, 710 S.
,
Ill., graph. Darst.
ISBN:
3540210814
Series Statement:
Advanced microelectronics 16
Content:
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approachs related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals ofthe 50 nm Technology Generation and beyond. TOC:Classical Regime for SiO2.- Transition to Silicon Oxynitrides.- Transition to High-K Gate Dielectrics.- Future Directions for Ultimate Scaling Technology Generations
Note:
Literaturangaben
Additional Edition:
Online-Ausg. High Dielectric Constant Materials Berlin, Heidelberg : Springer Berlin Heidelberg, 2005 9783540264620
Additional Edition:
Online-Ausg. Huff, H.R. High Dielectric Constant Materials Berlin, Heidelberg : Springer-Verlag Berlin Heidelberg, 2005 9783540264620
Language:
English
Subjects:
Physics
Keywords:
VLSI
;
MOS-FET
;
Gate
;
Siliciumdioxid
;
Dielektrische Schicht
;
VLSI
;
MOS-FET
;
Gate
;
Siliciumoxinitride
;
Dielektrische Schicht
;
Aufsatzsammlung
URL:
http://www.loc.gov/catdir/enhancements/fy0816/2004105869-d.html
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