Format:
1 Online-Ressource (1 online resource)
ISBN:
1119523516
,
1119523540
,
9781119523512
,
9781119523543
Series Statement:
IEEE Press series on microelectronic systems
Content:
1.7.3 Gate-Induced Drain Leakage1.7.4 Direct Source to Drain Tunneling; 1.7.5 Boltzmann Tyranny; 1.7.6 Ultrasteep Doping Profile; 1.8 Conclusion; References; 2 Emerging FET Architectures; 2.1 Tunnel FETs; 2.1.1 Structure; 2.1.2 Operation; 2.1.3 Challenges; 2.2 Impact Ionization MOSFET; 2.2.1 Structure; 2.2.2 Operation and Characteristics; 2.2.3 Challenges; 2.3 BIPOLAR I-MOS; 2.3.1 Structure; 2.3.2 Operation and Characteristics; 2.3.3 Challenges; 2.4 Negative capacitance FETs; 2.4.1 Negative Capacitance in Ferroelectric Materials; 2.4.2 Structure; 2.4.3 Operation and Characteristics
Content:
2.4.4 Challenges2.5 Two-Dimensional FETs; 2.5.1 Structure; 2.5.2 Operation; 2.5.3 Challenges; 2.6 Nanowire FETs; 2.6.1 Structure and Characteristics; 2.6.2 Gate-Induced Drain Leakage; 2.6.3 Challenges; 2.7 Nanotube FETs; 2.7.1 Structure; 2.7.2 Operation and Characteristics; 2.7.3 Gate-Induced Drain Leakage; 2.7.4 Dynamic Performance; 2.7.5 Impact of Spacer Material; 2.7.6 Impact of Core Diameter; 2.7.7 Challenges; 2.8 Conclusion; References; 3 Fundamentals of Junctionless Field-Effect Transistors; 3.1 Device Structure; 3.2 Operation; 3.2.1 Full Depletion; 3.2.2 Partial Depletion
Content:
3.2.3 Flat Band Condition3.2.4 Accumulation; 3.3 Design Parameters; 3.3.1 Fabrication Flow; 3.4 Parameters that Affect the Performance; 3.4.1 Mobility; 3.4.2 Impact of Strain on Mobility; 3.4.3 Carrier Ballisticity; 3.4.4 Temperature Dependence; 3.4.5 Bias Temperature Instability; 3.4.6 Low-Frequency Noise; 3.4.7 Short-Channel Effects; 3.5 Beyond Silicon JLFETs: Other Materials; 3.5.1 Germanium JLFETs; 3.5.2 Indium Gallium Arsenide JLFETs; 3.5.3 Gallium Nitride JLFETs; 3.6 Challenges; 3.6.1 High Source/Drain Series Resistance; 3.6.2 Random Dopant Fluctuations; 3.6.3 RDF in JLFETs
Content:
3.6.4 Sensitivity to Process Variations3.6.5 Fabrication Issues; 3.6.6 Band-to-Band Tunneling in OFF-State; 3.7 Conclusion; References; 4 Device Architectures to Mitigate Challenges in Junctionless Field-Effect Transistors; 4.1 Junctionless Accumulation-Mode Field-Effect Transistors; 4.1.1 Structure; 4.1.2 Operation; 4.1.3 Challenges; 4.2 Realizing Efficient Volume Depletion; 4.3 SOI JLFET With A High- Box; 4.3.1 Structure; 4.3.2 Transfer Characteristics; 4.3.3 Operation; 4.3.4 Impact of Gate Length Scaling; 4.3.5 Impact of BOX Thickness and Ground Plane Doping; 4.3.6 Impact of Traps
Content:
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution-many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture. JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop reference on the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: -Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET -Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation -Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs -Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices
Content:
Intro; Junctionless Field-Effect Transistors; Contents; Preface; 1 Introduction to Field-Effect Transistors; 1.1 Transistor Action; 1.2 Metal-Oxide-Semiconductor Field-Effect Transistors; 1.2.1 "Field-Effect" and Operation Modes; 1.2.2 MOSFET as a Switch; 1.2.3 Transfer Characteristics and Output Characteristics; 1.3 MOSFET Circuits: The Need for Complementary MOS; 1.3.1 CMOS Inverter; 1.3.2 Power Dissipation in CMOS Inverter; 1.4 The Need for CMOS Scaling; 1.5 Moore's Law; 1.6 Koomey's Law; 1.7 Challenges in Scaling the MOSFET; 1.7.1 Short-Channel Effects; 1.7.2 Hot Electron Effect
Note:
Includes bibliographical references and index
Additional Edition:
1119523532
Additional Edition:
9781119523536
Additional Edition:
Erscheint auch als Druck-Ausgabe 1119523532
Additional Edition:
9781119523536
Language:
English
DOI:
10.1002/9781119523543
URL:
https://onlinelibrary.wiley.com/doi/book/10.1002/9781119523543
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