In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 5B ( 1993-05-01), p. L738-
Abstract:
Polycrystalline-silicon back-sealed (PBS) wafers preserve high gettering efficiency as long as the back polysilicon film remains, even after exhaustion of the film through repeated oxidation. After complete consumption of the film, the high gettering efficiency decreases to some extent, but is still maintained by many oxidation-induced stacking faults and dislocations formed at the interface between the film and the silicon lattice during oxidation. All the Ni atoms and almost all the Cu atoms on the intentionally contaminated wafer surface are trapped in the back polysilicon film regardless of the density of oxygen precipitates.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.L738
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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