In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 11, No. 4 ( 1993-07-01), p. 1384-1387
Abstract:
The growth mechanisms of (Al,Ga)As lateral superlattices (LSL) on GaAs(100) and GaAs (110) vicinal surfaces were studied using transmission electron microscopy (TEM) and Monte Carlo simulations. In GaAs(100) surfaces, spontaneous formation of a LSL from (AlAs)1(GaAs)1 short period superlattices is explained by a vertical exchange reaction model. This mechanism may be the underlying cause of poor lateral segregation in conventional fractional layer (Al,Ga)As LSL. Growth on vicinal GaAs(110) surfaces leads to periodic faceting. Cross-sectional TEM images were compared with simulation of a step-flow model to understand the process of step bunching and the evolution of periodic microfacets.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1993
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
Bookmarklink