In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 8S ( 1995-08-01), p. 4477-
Abstract:
An extreme example of surface segregation is found in Sn-doped GaAs grown by molecular beam epitaxy (MBE). Abrupt changes in the doping profile are not possible, instead the dopant concentration decreases exponentially towards the wafer surface from the point at which doping was terminated. In this work it is shown that segregation can be suppressed by implanting the Sn from a very-low-energy (50 to 300 eV) ion beam during growth. The effect of ion implantation energy is studied using secondary ion mass spectroscopy (SIMS) to measure the depth profile of the implanted Sn. It is found that the level of incorporation can be increased by up to a factor of eight using a 300 eV ion energy.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.4477
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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