UID:
edocfu_9960141369802883
Format:
1 online resource (594 p.)
Edition:
Reprint 2021
ISBN:
9783112575666
Series Statement:
Physical Research ; 13
Note:
Frontmatter --
,
CONTENTS --
,
INVITED PAPERS --
,
EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS --
,
SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS --
,
SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION --
,
ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON --
,
ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION --
,
NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY --
,
CHARACTERIZATION OF POLYCRYSTALLINE α-Al2O3 IMPLANTED WITH ZIRCONIUM, COPPER OR IRON --
,
PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD) --
,
BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS --
,
PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS --
,
RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION --
,
THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS --
,
ION BEAM PROCESSING FdR SILICON-ON-INSULATOR --
,
THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS --
,
STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM --
,
IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS --
,
SUBMITTED PAPERS --
,
1. IMPLANTATION INTO SILICON --
,
STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON --
,
STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING --
,
GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION --
,
IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON --
,
RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING --
,
ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM --
,
In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE --
,
DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION --
,
INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS --
,
LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL --
,
ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT --
,
CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION --
,
APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS --
,
PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS --
,
SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS --
,
EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION --
,
2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS --
,
RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER --
,
PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING --
,
MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS --
,
AMORPHIZATION OF CD-IMPLANTED GAAS --
,
Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING --
,
APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE --
,
GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION --
,
INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES --
,
MODIFICATION OF THE InP(100) SURFACE BY ION BEAM --
,
DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP --
,
CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES --
,
3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS --
,
INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE --
,
LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS --
,
HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES --
,
'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION --
,
INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING --
,
ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON --
,
INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING --
,
ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES --
,
ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE --
,
RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON --
,
DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON --
,
4. SILICIDES --
,
INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM --
,
PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS --
,
LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES --
,
FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION --
,
MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE --
,
QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP --
,
REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si --
,
5. IMPLANTATION INTO METALS --
,
SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS --
,
CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION --
,
STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS --
,
IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY --
,
TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING --
,
IMPLANTATION INDUCED TEXTURE --
,
SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING --
,
PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION --
,
RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS --
,
WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION --
,
STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE --
,
STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS --
,
EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe --
,
AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS --
,
6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS --
,
THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING --
,
SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION --
,
THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION --
,
STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION --
,
MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM --
,
EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS --
,
ION BEAM MIXING OF Al/Fe BINARY SYSTEMS --
,
LASER BEAM MODIFICATION OF OPTICAL FILMS --
,
MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM --
,
STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS --
,
EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS --
,
CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES --
,
7. MATERIALS DEPOSITION --
,
RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION --
,
ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS --
,
SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM --
,
ION BEAM ASSISTED DEPOSITION OF Al ON Fe --
,
LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD --
,
METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING --
,
CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS --
,
MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION --
,
FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION --
,
8.
,
SILICON ON INSULATORS --
,
HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON --
,
A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING --
,
TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON—INSULATOR FORMATION BY MILLISECOND HEATING --
,
SOI STRUCTURES FORMATION BY PULSED HEATING --
,
FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING --
,
THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS --
,
SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS --
,
OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON --
,
STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS --
,
THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY --
,
9. DIAGNOSTIC AND ION BEAM EQUIPMENTS --
,
HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS --
,
HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS --
,
FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS --
,
IN SITU XPS AND LEED STUDY OF Si/SiC〉2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION --
,
HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE --
,
LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM --
,
DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh --
,
QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS --
,
PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS --
,
A LITHIUM LIQUID METAL ION SOURCE --
,
PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS --
,
ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS --
,
PROBE MEASUREMENTS IN LASER PRODUCED PLASMA --
,
PLASMATRON ION SOURCE FOR ION IMPLANTATION --
,
CEMS STUDY ON ALUMINIUM IMPLANTED IRON --
,
CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS --
,
LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE --
,
INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY --
,
HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS --
,
AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE --
,
10. HIGH TEMPERATURE SUPERCONDUCTORS --
,
LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS --
,
EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS --
,
ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION --
,
PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING --
,
FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING --
,
PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS --
,
FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION --
,
SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD --
,
11. FUNDAMENTALS --
,
COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING --
,
DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION --
,
ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR --
,
A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION --
,
PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION --
,
COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES --
,
THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS --
,
TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY --
,
THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS --
,
RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON --
,
IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES --
,
AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION --
,
ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES --
,
THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS --
,
MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS --
,
NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES --
,
ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION --
,
DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION --
,
PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION --
,
THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES --
,
NUCLEATION A? VARYING TEMPERATURES --
,
MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION --
,
ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES --
,
NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS --
,
A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION --
,
MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits --
,
LATE PAPER --
,
A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING --
,
Author --
,
Physical Research
,
In German.
Additional Edition:
ISBN 9783112575659
Language:
German
DOI:
10.1515/9783112575666
URL:
https://doi.org/10.1515/9783112575666
URL:
https://www.degruyter.com/isbn/9783112575666
Bookmarklink
