In:
Applied Physics Letters, AIP Publishing, Vol. 80, No. 22 ( 2002-06-03), p. 4253-4255
Abstract:
This work presents improved channel mobility of n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) on 4H–SiC, achieved by gate-oxide nitridation in nitric oxide. Lateral enhancement mode MOSFETs were fabricated using standard polycrystalline silicon gate process and 900 °C annealing for the source and drain contacts. The low field mobility of these MOSFETs was as high as 48 cm2/Vs together with a threshold voltage of 0.6 V, while the interface state density—determined from the subthreshold slope—was about 3×1011 eV−1 cm−2. The 43-nm-thick gate oxide of coprocessed metal–oxide–semiconductor structures exhibited a breakdown field strength of 9 MV/cm.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2002
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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