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  • Gruen, Dieter M.  (3)
  • Pan, Xianzheng  (3)
  • 1990-1994  (3)
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  • 1990-1994  (3)
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  • 1
    Online Resource
    Online Resource
    AIP Publishing ; 1994
    In:  Applied Physics Letters Vol. 64, No. 12 ( 1994-03-21), p. 1502-1504
    In: Applied Physics Letters, AIP Publishing, Vol. 64, No. 12 ( 1994-03-21), p. 1502-1504
    Abstract: Diamond films are predominantly grown using approximately 1% of a hydrocarbon precursor in hydrogen gas. Hydrogen is generally believed to be necessary for the diamond thin-film growth process. However, hydrogen in varying amounts is inevitably incorporated in the growing diamond lattice, leading to structural defects. We report here the successful growth of diamond films using fullerene precursors in an argon microwave plasma, a unique development achieved without the addition of hydrogen or oxygen. We speculate that collisional fragmentation of C60 to give C2 could be responsible for the high growth rate of the very-fine-grained diamond films.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1994
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    AIP Publishing ; 1994
    In:  Journal of Applied Physics Vol. 75, No. 3 ( 1994-02-01), p. 1758-1763
    In: Journal of Applied Physics, AIP Publishing, Vol. 75, No. 3 ( 1994-02-01), p. 1758-1763
    Abstract: Microwave discharges (2.45 GHz) have been generated in C60-containing Ar. The gas mixtures were produced by flowing Ar over fullerene-containing soot at a variety of temperatures. Optical spectroscopy shows that the spectrum is dominated by the d 3Πg–a  3Πu Swan bands of C2 and particularly the Δv=−2, −1, 0, +1, and +2 sequences. These results give direct evidence that C2 is in fact one of the products of C60 fragmentation brought about, at least in part, by collisionally induced dissociation. C60 has been used as a precursor in a plasma-enhanced chemical vapor deposition experiment to grow diamond-thin films. The films, grown in an Ar/H2 gas mixture (0.14% carbon content, 100 Torr, 20 sccm Ar, 4 sccm H2, 1500 W, 850 °C substrate temperature) were characterized with scanning electron microscopy, x-ray diffraction, and Raman spectroscopy. The growth rate was found to be ∼0.6 μm/h. Assuming a linear dependence on carbon concentration, a growth rate at least six times higher than commonly observed using methane as a precursor would be predicted at a carbon content of 1% based on C60. Energetic and mechanistic arguments are advanced to rationalize this result based on C2 as the growth species.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1994
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 3
    Online Resource
    Online Resource
    American Vacuum Society ; 1994
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 12, No. 4 ( 1994-07-01), p. 1491-1495
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 12, No. 4 ( 1994-07-01), p. 1491-1495
    Abstract: Highly uniform, smooth nanocrystalline diamond films have been fabricated with a magnetoactive microwave chemical vapor deposition system. The top and bottom magnet currents were 145 and 60 A, respectively, while the microwave power and substrate temperature were controlled at 1500 W and 850 °C, respectively during deposition. The total processing pressure was regulated at 40 Pa (300 mTorr) with gas-flow rates of 30 sccm of hydrogen, 2.4 sccm of methane, and 1 sccm of oxygen. Diamond films obtained under these conditions have grain sizes between 0.1 and 0.3 μm, and a mean roughness of 14.95 nm. The growth rate is 0.1 μm/h. Characterization techniques have involved x-ray diffraction, Raman spectroscopy, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. Both x-ray and electron diffraction patterns show no evidence of graphitic phase. Although a high density of twins and stacking faults was revealed by high-resolution electron microscopy, compact diamond grains, and clean intergranular boundaries (no graphitic phase) were observed.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1994
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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