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  • Krauss, A. R.  (3)
  • 1990-1994  (3)
  • Physics  (3)
Type of Medium
Language
Years
  • 1990-1994  (3)
Year
Subjects(RVK)
  • Physics  (3)
RVK
  • 1
    Online Resource
    Online Resource
    American Vacuum Society ; 1994
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 12, No. 4 ( 1994-07-01), p. 1943-1951
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 12, No. 4 ( 1994-07-01), p. 1943-1951
    Abstract: Low-energy (5–15 keV) pulsed ion beam surface analysis comprises several different surface spectroscopies which possess the ability to provide a remarkably wide range of information directly relevant to the growth of single and multicomponent semiconductor, metal and metal-oxide thin films and layered structures. Ion beam methods have not however, been widely used as anin situ monitor of thin film growth because existing commercial instrumentation causes excessive film damage, physically conflicts with the deposition equipment, and requires a chamber pressure ∼10−7–10−8 Torr, i.e., much lower than that associated with most deposition processes (≥10−4 Torr). We have developed time-of-flight ion scattering and recoil spectroscopy (TOF-SARS) as a nondestructive, insitu, real-time probe of thin film composition and structure which does not physically interfere with the deposition process. Several TOF-SARS implementations are exceptionally surface specific, yet in a properly designed system can yield high-resolution data at ambient pressures well in excess of 10 mTorr (4–6 orders of magnitude higher than conventional surface analytic methods). Because of the exceptional surface specificity of these methods, TOF-SARS is ideally suited as a means of studying ultrathin layers and atomically abrupt interfaces. TOF-SARS instrumentation designed specifically for use as an in situ, real-time monitor of growth processes for single and multicomponent thin films and layered structures is described here. Representative data are shown for in situ analysis of Pb and Zr layers at room temperature and high vacuum, as well as under conditions appropriate to the growth of Pb(ZrxTi1−x)O3 (PZT) perovskite films on MgO and RuO2 substrates.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1994
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Online Resource
    Online Resource
    American Vacuum Society ; 1994
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 12, No. 4 ( 1994-07-01), p. 1557-1564
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 12, No. 4 ( 1994-07-01), p. 1557-1564
    Abstract: A time-of-flight (TOF) ion scattering and direct recoil spectrometer (ISS/DRS) has been developed to study the surface composition and reconstruction of metals, metal-oxides, and semiconductors, and to provide in situ characterization of the thin-film deposition process. The in situ, real-time study of Pb, Zr, and Ru ultrathin films produced by ion beam sputter deposition is presented here as the first demonstration of TOF-ISS as a means of characterizing monolayer and submonolayer growth, both in UHV and in mTorr oxygen background. The capability of performing surface analysis at pressures ≳10−3 Torr is unique to pulsed ion beam surface analysis among surface analytical methods and enables the in situ monitoring of oxide thin-film growth processes and surface–gas phase reactions. Using angular-resolved ISS combined with Auger electron spectroscopy, we studied the oxygen adsorption and reconstruction of (001) oriented InSb thin-film surfaces. It was found that the adsorption of molecular oxygen on the InSb (001) surface is consistent with the Langmuir model. Oxygen adsorption preferentially occurs on the antimony sites corresponding to the extension of the lattice into the vacuum and reduces the inward contraction of the first two layers of the clean InSb (001) surface relative to the bulk atomic spacing.  
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1994
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
    Library Location Call Number Volume/Issue/Year Availability
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  • 3
    Online Resource
    Online Resource
    American Vacuum Society ; 1991
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 9, No. 3 ( 1991-05), p. 394-400
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 9, No. 3 ( 1991-05), p. 394-400
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1991
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
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