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  • American Vacuum Society  (25)
  • Physics  (25)
  • 1
    Online Resource
    Online Resource
    American Vacuum Society ; 1998
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 16, No. 3 ( 1998-05-01), p. 1779-1784
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 16, No. 3 ( 1998-05-01), p. 1779-1784
    Abstract: We have used the ion spectroscopic techniques of direct recoil spectroscopy and mass spectroscopy of recoiled ions to demonstrate that low energy reactive ion sputtering of Ge is capable of removing surface impurities such as carbon. The experiments were performed in a vacuum chamber maintained at 3.5×10−7 Torr. At these pressures, physical sputtering using noble gas is not effective for cleaning Ge surfaces as carbon redeposits onto the surface. In this article, we demonstrate that reactive sputtering of Ge using 4.0 keV nitrogen at a Ge surface temperature of ∼740 K and above removes surface carbon and deposits nitrogen on the Ge surface. Heating the nitrogen exposed Ge surface to above ∼880 K results in the desorption of nitrogen and generates an atomically clean Ge surface, under poor vacuum conditions.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1998
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 2
    Online Resource
    Online Resource
    American Vacuum Society ; 1999
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 17, No. 5 ( 1999-09-01), p. 2634-2641
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 17, No. 5 ( 1999-09-01), p. 2634-2641
    Abstract: We have modeled, designed, built, and tested a novel reflectron time-of-flight (TOF) analyzer, which is capable of performing surface analysis using both secondary ion mass spectroscopy (SIMS) and mass spectroscopy of recoiled ions (MSRI). All elements (including H and He) can be identified, with isotopic resolution, using both MSRI and SIMS. For ions of a given mass, the higher energy ions penetrate further into the reflectron before being turned around while the lower energy ions do not penetrate as deeply. By properly adjusting both the experimental geometry and the reflectron voltages, all ions of a given mass arrive at the detector simultaneously—resulting in enhanced mass resolution compared with simple TOF detection. SIM spectra are complicated by molecular fragments in addition to elemental ions. In MSRI only elemental ions are detected. As a result, data analysis in MSRI is less complicated than in SIMS. Being able to use a single analyzer to selectively obtain SIMS or MSRI data provides complementary surface information. MSRI has a number of unique capabilities for surface studies. In situ, real-time surface analysis can be performed during film growth at pressures of ∼2.5 mTorr at the substrate by differentially pumping both the ion source and the reflectron analyzer region. It has been demonstrated that the ratio of the positive to negative ion yield is phase specific; for example, one can clearly distinguish the different forms of carbon (diamond versus graphite versus amorphous carbon) during film growth. MSRI analysis of poorly conducting surfaces is possible.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1999
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 3
    Online Resource
    Online Resource
    American Vacuum Society ; 1988
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 6, No. 3 ( 1988-05-01), p. 2073-2076
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 6, No. 3 ( 1988-05-01), p. 2073-2076
    Abstract: Methoxyl carbon and oxygen are shown to specifically add to the lithium fraction of a CuLi surface exposed to methanol. The lithium surface fraction is determined by direct recoil spectroscopic (DRS) measurement of the H, C, and O added to the surface by methanol exposure and by subsequent comparison to the amounts of C, O, and metal determined by Auger electron spectroscopy (AES) or x-ray photoelectron spectroscopy (XPS). Direct determination of surface Li by AES or XPS is complicated by relatively large sampling depths (5 or 20 Å). The indirect determination of surface Li by methanol chemisorption/AES has been used to calibrate the sensitivity of 5-keV K+ DRS for lithium.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1988
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 4
    Online Resource
    Online Resource
    American Vacuum Society ; 1990
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 8, No. 3 ( 1990-05-01), p. 2849-2855
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 8, No. 3 ( 1990-05-01), p. 2849-2855
    Abstract: Photon and electron desorption from the vacuum chamber walls of electron storage rings such as the proposed advanced photon source (APS) are sometimes responsible for the production of large gas loads during operation, even in systems with very good static vacuum. The gas released by beam-induced desorption results in scattering of the beam electrons, and a consequent reduction in the beam lifetime. In extreme cases, the beam-induced outgassing may cause so much scattering that it is not possible to obtain the design goals with regard to obtainable beam current. Consequently, it is important that the surfaces that are exposed to the electron beam and photon fluxes contain as little trapped gas as possible, and that the gas burden during operation be kept as low as possible. The current study investigates the effectiveness of a chemical cleaning treatment developed at the Center for European Nuclear Research (CERN) for the large electron-positron (LEP) storage ring [A. G. Mathewson, LEP Vacuum Tech, Note Jan. 20, 1986; A.G. Mathewson, LEP Vacuum Tech. Note Jan. 15, 1986; A. G. Mathewson, et al., J. Vac. Sci. Technol. A 7, 77 (1989).] as applied to the 6063 alloy to be used in APS. Additionally, depth profiling of the chemically-cleaned samples and samples that were vapor-degreased only, provides new insight on the cleaning process as it applies to the alloy proposed for use in APS. To reduce the beam-induced outgassing of the APS vacuum chamber, a two-step cleaning process has been investigated, based on the treatment utilized for the 6060 Al used in the LEP vacuum chamber at CERN. The treatment is based on an understanding of the near-surface composition as follows: The surface consists of a superficial MgO layer, which is also contaminated with hydrocarbons, lying on top of another layer that is primarily Al2O3 (A.G. Mathewson, LEP Vacuum Tech. Note Jan. 20, 1986). In the first step of the cleaning process, MgO and C are removed by Almeco 18, an alkaline detergent manufactured by Henkel A. G. In the second step, Amklene, a modified KOH solution which is not capable of removing magnesium oxide, is believed to reduce the thickness of the remaining aluminum oxide layer. The current results suggest a modified interpretation of the mechanism by which these chemical cleaning agents alter the surface of the 6063 aluminum alloy. The surface contains both Mg (as MgO) and Al2O3, and the MgO concentration extends much deeper into the bulk than the aluminum oxide. Despite profiling reveals that the underlying aluminum is largely metallic, rather than Al2O3. The aluminum oxide layer observed after the Almeco 18 cleaning step is largely the native aluminum oxide layer that forms during room temperature exposure to air between cleaning operations. The Amklene step does little to remove the native aluminum oxide layer and at the same time acts to restore some of the original MgO layer. The present results do not show any obvious benefits arising from the use of Amklene after treatment in Almeco 18.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1990
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 5
    Online Resource
    Online Resource
    American Vacuum Society ; 1994
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 12, No. 6 ( 1994-11-01), p. 3332-3336
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 12, No. 6 ( 1994-11-01), p. 3332-3336
    Abstract: We present a process for fabricating lattice-matched InGaAs/InAlAs modulation doped field effect transistors (MODFETs) on InP wafers including molecular beam epitaxial growth of a high electron mobility transistor structure consisting of In0.53Ga0.47As and In0.52Al0.48As layers, and electron-beam lithography for gate definition. For selective gate recessing we investigated both wet and dry etch processes. Viable procedures have been found with a citric acid: H2O2:H2O wet etching solution and with an HBr/Ar gas mixture for reactive ion etching (RIE). The selectivities obtained for InGaAs with respect to InAlAs were 14:1 for the wet etchant and 6.7:1 for RIE. Another crucial process step is the MODFET isolation. Earlier work by other groups has shown that implant isolation is difficult on InGaAs [S. J. Pearton et al., Mater. Res. Soc. Symp. Proc. 144, 433 (1989)]. Therefore, we studied both oxygen ion implantation as well as wet-chemical mesa etching for device isolation on the same wafer. Although the isolation sheet resistance achieved with ion implantation is inferior to that obtained in a mesa process, we found similar MODFET performance for both approaches. For devices with a 0.3-μm gate length and 1.3-μm source–drain distance, a transconductance of more than 600 mS/mm and threshold voltages of −1.3 and −0.6 V for wet and dry recessed transistors, respectively, were obtained. Wafer mapping measurements showed that the MODFET data are uniform over an entire 2-in. wafer and also from wafer-to-wafer within a batch.  
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1994
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 6
    Online Resource
    Online Resource
    American Vacuum Society ; 2003
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 21, No. 4 ( 2003-07-01), p. 1644-1647
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 21, No. 4 ( 2003-07-01), p. 1644-1647
    Abstract: The effect of O2 exposure on field emission properties of ultrananocrystalline diamond (UNCD) coated ungated Si tip arrays is reported. The behavior of current degradation during O2 exposure and current recovery following evacuation of O2 strongly depended on the initial current/electric field applied to the emitters. At a low initial current of 50 μA/electric field of 5.8 V/μm, O2 exposure (1×10−7, 5×10−7, and 1×10−6 Torr) resulted in a rapid decrease in current in the beginning, followed by a slow decrease. The current made a strong recovery toward the original value when O2 was pumped out. With an increased initial current of 180 μA/electric field of 10.3 V/μm, the currents recovered only to a lesser extent after O2 was evacuated. At an even higher initial current of 930 μA/electric field of 20.5 V/μm, the current decreased steadily and finally stabilized after an exposure of 720 L with only 34% degradation. To explain these observations, we propose a hypothesis of oxygen interaction with the UNCD surface.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2003
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 7
    Online Resource
    Online Resource
    American Vacuum Society ; 1987
    In:  Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena Vol. 5, No. 5 ( 1987-09-01), p. 1477-1481
    In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, Vol. 5, No. 5 ( 1987-09-01), p. 1477-1481
    Abstract: The yield of neutral and ionized Mo, Mo2, and Mo3 sputtered from a Mo target by 4-keV Ar+ has been measured in the surface analysis by resonance ionization of sputtered atoms (SARISA) machine. Ionization spectroscopy combined with time-of-flight (TOF) secondary ion mass spectrometry (SIMS) allowed us to obtain for the first time absolute sputtering yields and ionization fractions of sputtered atoms and metal clusters. Unlike sputtered atomic species, Mo clusters have been found to be sputtered with large ion fractions. The sputtering yield of Mo clusters is very sensitive to oxygen on the surface, i.e., even small amounts of oxygen on the surface identified by Mo+ and MoO+ peaks in the SIMS spectrum, reduce the cluster yield substantially. A broad structureless absorption band was observed for sputtered Mo2 molecules indicating substantial rovibronic excitation as predicted by theoretical models.
    Type of Medium: Online Resource
    ISSN: 0734-211X , 2327-9877
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1987
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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  • 8
    Online Resource
    Online Resource
    American Vacuum Society ; 1984
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 2, No. 2 ( 1984-04-01), p. 693-697
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 2, No. 2 ( 1984-04-01), p. 693-697
    Abstract: Velocity distributions and relative populations in the fine-structure levels of the a 5DJ ground state of Fe atoms, produced by sputtering with 3 keV argon ions, have been investigated by Doppler-shifted laser-induced fluorescence. The laser system employs a single-mode, scanning ring dye laser, amplified by a sequence of three excimer-pumped flowing dye cells. Frequency doubling in a KD*P crystal was used to produce high energy ( & gt;0.5 mJ) pulses of narrowband tunable UV output near 300 nm. Laser power influence on effective velocity bandwidth was investigated. Favorable light-collection geometry minimized distortion of the velocity spectra from apparatus-averaging effects. In impurity flux diagnostic applications in fusion devices, substantial spatial averaging may occur. In the latter case, the narrow velocity bandwidth (70 m/s, transform limit) of the present laser system is particularly useful.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1984
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 9
    Online Resource
    Online Resource
    American Vacuum Society ; 1989
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 7, No. 3 ( 1989-05-01), p. 1766-1771
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 7, No. 3 ( 1989-05-01), p. 1766-1771
    Abstract: Doppler-shifted two-photon laser-induced fluorescence spectroscopy (LFS) has been used to measure the velocity distributions of Zn atoms ejected by Ar+ ion bombardment from both a Zn surface and a ZnS single crystal. Doppler-shifted spectroscopy in combination with time of flight(TOF), has also been employed to investigate Zn atoms ejected from a ZnS single crystal under irradiation by 308-nm photons (XeCl excimer laser). The absolute Zn sputtering yields from ion-bombarded and laser-irradiated ZnS samples were determined by comparison with LFS measurements of Zn atoms sputtered from pure Zn targets by Ar+ ions since the absolute sputtering yield is known. For the Zn target the velocity distributions of the ion-induced sputtered Zn atoms were in good agreement with the Sigmund–Thompson distribution based on the known binding energy of 1.35 eV. On the other hand, the velocity distribution of Zn atoms ion sputtered from ZnS showed some deviation from the Sigmund–Thompson distribution and had a lower binding energy, ∼0.9 eV. The velocity distributions of the laser-ablated Zn atoms from ZnS were Maxwell–Boltzmann in nature with characteristic temperatures increasing from 2000 to 9000 K at fluences of 20 and 80 mJ/cm2, respectively. The absolute sputtering yield (Y) of Zn sputtered from ZnS was found to be Y≂8 atoms/ion for ion sputtering and Y≂10−6 atoms/photon at a laser fluence of 30 mJ/cm2 for laser ablation. High-resolution Doppler-shift techniques have been combined with TOF techniques. This promising combination permits unambiguous detection of prompt and delayed emission of ablated atoms, as well as the observation of possible molecular or cluster fragmentation. The results obtained indicate that no delayed emission is occurring and suggest the possibility of molecule or cluster emission from ZnS.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1989
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 10
    Online Resource
    Online Resource
    American Vacuum Society ; 1983
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 1, No. 2 ( 1983-04-01), p. 924-928
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 1, No. 2 ( 1983-04-01), p. 924-928
    Abstract: Previous experiments on segregation in dilute alloys of lithium in aluminum have demonstrated rapid enrichment of lithium in the uppermost monolayer, as well as a slower buildup in the subsurface region as a result of radiation-induced segregation effects during sputtering. Surface and subsurface enrichment of lithium in copper and aluminum alloys has been observed by secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES), and x-ray photoemission spectroscopy (XPS). The activation energies for lithium diffusion in Cu and Al have been measured and segregation kinetics are compared for dilute alloys of Li in Cu and Al, and a high lithium content copper alloy. The results are interpreted in terms of both Gibbsian and radiation-induced segregation effects.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1983
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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