In:
Journal of Applied Physics, AIP Publishing, Vol. 72, No. 1 ( 1992-07-01), p. 311-312
Abstract:
Ohmic contact properties of Pd/Ti bilayer to heavily doped n+-polycrystalline silicon, prepared by electron beam evaporation, were studied by using both electrical measurements and Rutherford backscattering spectroscopy. The electrical behavior of the contacts at different sintering conditions is explained by the corresponding chemical composition changes at the metal/silicon interface during the sintering process.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1992
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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