In:
Proceedings, annual meeting, Electron Microscopy Society of America, Cambridge University Press (CUP), Vol. 48, No. 4 ( 1990-08), p. 576-577
Abstract:
In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi 2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi 2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co + ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l0 17 per cm 2 . During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).
Type of Medium:
Online Resource
ISSN:
0424-8201
,
2690-1315
DOI:
10.1017/S0424820100176010
Language:
English
Publisher:
Cambridge University Press (CUP)
Publication Date:
1990
SSG:
11
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