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  • American Vacuum Society  (7)
  • 1985-1989  (7)
Type of Medium
Publisher
  • American Vacuum Society  (7)
Language
Years
  • 1985-1989  (7)
Year
Subjects(RVK)
  • 1
    Online Resource
    Online Resource
    American Vacuum Society ; 1987
    In:  Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena Vol. 5, No. 5 ( 1987-09-01), p. 1477-1481
    In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, Vol. 5, No. 5 ( 1987-09-01), p. 1477-1481
    Abstract: The yield of neutral and ionized Mo, Mo2, and Mo3 sputtered from a Mo target by 4-keV Ar+ has been measured in the surface analysis by resonance ionization of sputtered atoms (SARISA) machine. Ionization spectroscopy combined with time-of-flight (TOF) secondary ion mass spectrometry (SIMS) allowed us to obtain for the first time absolute sputtering yields and ionization fractions of sputtered atoms and metal clusters. Unlike sputtered atomic species, Mo clusters have been found to be sputtered with large ion fractions. The sputtering yield of Mo clusters is very sensitive to oxygen on the surface, i.e., even small amounts of oxygen on the surface identified by Mo+ and MoO+ peaks in the SIMS spectrum, reduce the cluster yield substantially. A broad structureless absorption band was observed for sputtered Mo2 molecules indicating substantial rovibronic excitation as predicted by theoretical models.
    Type of Medium: Online Resource
    ISSN: 0734-211X , 2327-9877
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1987
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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  • 2
    Online Resource
    Online Resource
    American Vacuum Society ; 1989
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 7, No. 3 ( 1989-05-01), p. 1766-1771
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 7, No. 3 ( 1989-05-01), p. 1766-1771
    Abstract: Doppler-shifted two-photon laser-induced fluorescence spectroscopy (LFS) has been used to measure the velocity distributions of Zn atoms ejected by Ar+ ion bombardment from both a Zn surface and a ZnS single crystal. Doppler-shifted spectroscopy in combination with time of flight(TOF), has also been employed to investigate Zn atoms ejected from a ZnS single crystal under irradiation by 308-nm photons (XeCl excimer laser). The absolute Zn sputtering yields from ion-bombarded and laser-irradiated ZnS samples were determined by comparison with LFS measurements of Zn atoms sputtered from pure Zn targets by Ar+ ions since the absolute sputtering yield is known. For the Zn target the velocity distributions of the ion-induced sputtered Zn atoms were in good agreement with the Sigmund–Thompson distribution based on the known binding energy of 1.35 eV. On the other hand, the velocity distribution of Zn atoms ion sputtered from ZnS showed some deviation from the Sigmund–Thompson distribution and had a lower binding energy, ∼0.9 eV. The velocity distributions of the laser-ablated Zn atoms from ZnS were Maxwell–Boltzmann in nature with characteristic temperatures increasing from 2000 to 9000 K at fluences of 20 and 80 mJ/cm2, respectively. The absolute sputtering yield (Y) of Zn sputtered from ZnS was found to be Y≂8 atoms/ion for ion sputtering and Y≂10−6 atoms/photon at a laser fluence of 30 mJ/cm2 for laser ablation. High-resolution Doppler-shift techniques have been combined with TOF techniques. This promising combination permits unambiguous detection of prompt and delayed emission of ablated atoms, as well as the observation of possible molecular or cluster fragmentation. The results obtained indicate that no delayed emission is occurring and suggest the possibility of molecule or cluster emission from ZnS.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1989
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 3
    Online Resource
    Online Resource
    American Vacuum Society ; 1986
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 4, No. 3 ( 1986-05-01), p. 1779-1785
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 4, No. 3 ( 1986-05-01), p. 1779-1785
    Abstract: The use of laser radiation to study the sputtering process is of relatively recent origin. Much has been learned from this work about the basic physics of the sputtering process itself through measurements of velocity and excited state distributions of sputtered atoms and the effects of adsorbates on substrate sputtering yields. Furthermore, the identification, characterization, and sensitive detection of sputtered atoms by laser spectroscopy has led to the development of in situ diagnostics for impurity fluxes in the plasma edge regions of tokamaks and of ultrasensitive methods (ppb Fe in Si) for surface analysis with ultralow (picocoulomb) ion fluences. The techniques involved in this work, laser fluorescence and multiphoton resonance ionization spectroscopy, will be described and illustrations given of results achieved up to now.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1986
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 4
    Online Resource
    Online Resource
    American Vacuum Society ; 1988
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 6, No. 3 ( 1988-05-01), p. 2064-2068
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 6, No. 3 ( 1988-05-01), p. 2064-2068
    Abstract: The depth of origin of sputtered atoms is a subject of considerable interest. The surface sensitivity of analytical techniques such as secondary ion mass spectrometry and surface analysis by resonance ionization of sputtered atoms (SARISA), and the sputtering properties of strongly segregating alloy systems, are critically dependent on the sputtering depth of origin. A significant discrepancy exists between the predictions of existing analytical sputtering theories and computer sputtering models; in general, the computer models predict a much shallower depth of origin. The existing experimental evidence suggests that most of the sputtered atoms originate in the topmost atomic layer, but until recently, the results have not been definitive. We have experimentally determined the depth of origin of atoms sputtered from surfaces consisting of Cu films of & lt;2 monolayers on a Ru(0001) substrate. The Cu/Ru target was statically sputtered using 3.6-keV Ar+. The sputtered neutrals were nonresonantly laser ionized and detected using SARISA. The Cu/Ru sputtering yield ratio and the suppression of the Ru sputtering yield were determined for various Cu coverages. The results indicate that the majority of the sputtered atoms originate in the topmost atomic layer. The Cu/Ru system is also modeled using a modified transport of ions in matter (trim) code. It was found that trim c does not correctly treat the first atomic layer, resulting in a serious underestimate of the number of sputtered atoms which originate in this layer. The corrected version adequately describes the results, predicting that for the experimental conditions roughly two-thirds of the sputtered atoms originate in the first atomic layer. These results are significantly greater than the analytical theory estimate of & gt;40%.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1988
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 5
    Online Resource
    Online Resource
    American Vacuum Society ; 1986
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 4, No. 3 ( 1986-05-01), p. 1227-1231
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 4, No. 3 ( 1986-05-01), p. 1227-1231
    Abstract: We discuss the use of composite materials based on the use of self-sustaining coatings to reduce sputtering-induced erosion in magnetic confinement fusion devices while providing enhanced high-heat flux properties. One material, a copper–lithium alloy has been described previously. A second group of materials consists of porous tungsten, tungsten carbide, or tantalum, impregnated with an alkali metal alumino-silicate. These materials form an alkali metal overlayer similar to that found on the Cu–Li alloy. A third group of materials is obtained by infiltrating the porous high-Z refractory metal with an alkali-metal-bearing alloy such as Cu–Li or Al–Li. These materials combine the high thermal conductivity of the infiltrate material with the high-temperature strength and melt layer stability of tungsten or tantalum. Calculations of the sputtering properties indicate that it may be possible to use a tungsten composite limiter at plasma edge temperature up to ∼300 eV.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1986
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 6
    Online Resource
    Online Resource
    American Vacuum Society ; 1987
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 5, No. 4 ( 1987-07-01), p. 2763-2767
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 5, No. 4 ( 1987-07-01), p. 2763-2767
    Abstract: VBe12 compound and porous titanium composites infiltrated with a lithium bearing copper alloy have been investigated as a means of reducing fusion plasma impurities and sputter erosion associated with fusion tokamak limiter and divertor surfaces. These materials possess high-temperature strength and melt-layer stability properties in conjunction with the self-sustainment of a low-Z overlayer that inhibits erosion of the underlying structural substrate. The sputter erosion and redeposition properties of these materials have been analyzed by calculating the sputtering coefficients via TRIM, which are subsequently used in the REDEP code to evaluate their performance for various plasma-edge temperature regimes. The results have been compared to elemental beryllium, tungsten, and graphite on the basis of minimizing plasma impurities and material erosion, suppressing runaway self-sputtering, and/or enhancing thermal properties.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1987
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 7
    Online Resource
    Online Resource
    American Vacuum Society ; 1988
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 6, No. 3 ( 1988-05-01), p. 2073-2076
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 6, No. 3 ( 1988-05-01), p. 2073-2076
    Abstract: Methoxyl carbon and oxygen are shown to specifically add to the lithium fraction of a CuLi surface exposed to methanol. The lithium surface fraction is determined by direct recoil spectroscopic (DRS) measurement of the H, C, and O added to the surface by methanol exposure and by subsequent comparison to the amounts of C, O, and metal determined by Auger electron spectroscopy (AES) or x-ray photoelectron spectroscopy (XPS). Direct determination of surface Li by AES or XPS is complicated by relatively large sampling depths (5 or 20 Å). The indirect determination of surface Li by methanol chemisorption/AES has been used to calibrate the sensitivity of 5-keV K+ DRS for lithium.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1988
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
    Library Location Call Number Volume/Issue/Year Availability
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