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  • AIP Publishing  (5)
  • Berger, Paul R.  (5)
  • 2005-2009  (5)
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  • AIP Publishing  (5)
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  • 2005-2009  (5)
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  • 1
    In: Applied Physics Letters, AIP Publishing, Vol. 92, No. 1 ( 2008-01-07)
    Abstract: We report here an improved efficiency, up to 4.8% with a high fill factor of ∼63% under AM 1.5G spectral illumination and 100mW∕cm2 intensity, for poly(3-hexylthiophene) and [6,6]-phenyl C61 butyric acid methyl ester bulk heterojunction photovoltaic (PV) devices with a 1:0.8 weight ratio using surface modifications to the indium tin oxide (ITO) anodes through plasma oxidized silver. Here, an enhanced short-circuit current density was achieved without significant loss in the open-circuit voltage ( & gt;0.6V) nor the fill factor ( & gt;63%), leading to an efficiency jump from 4.4% in the control devices to 4.8% with the surface modified ITO anode. The enhanced short-circuit density is attributed to an interface energy step between the ITO and the polymer hole transporting layer. It has been theorized that the introduction of an interface energy step could alter the charge collection efficiency, resulting in an improved overall efficiency in PV devices. In our study, the current density–voltage characteristics under darkness clearly show an increased current density, especially under forward bias, for the anode treated cell, suggesting the presence of an interface energy step between the ITO and the hole transporting layer with surface modified ITO anodes.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2008
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    AIP Publishing ; 2006
    In:  Journal of Applied Physics Vol. 99, No. 1 ( 2006-01-01)
    In: Journal of Applied Physics, AIP Publishing, Vol. 99, No. 1 ( 2006-01-01)
    Abstract: Polymerized dichlorotetramethyldisiloxane (DCTMDS) films deposited by radio-frequency pulsed plasma polymerization (PPP) demonstrated very high dielectric constants for a polymer-based system, in the range of 7–10. The high dielectric constants of PPP DCTMDS films are due to the high polarizability of the DCTMDS monomer. The pulsed plasma duty cycle (on/off) resulted in slightly higher dielectric constant DCTMDS films for higher duty cycles. The variation of dielectric constants does not show any trend with varying film thicknesses, indicating that the thickness of the deposited films is not significant for controlling permittivity. Postdeposition annealing in a certain temperature range improves the electrical integrity of PPP DCTMDS films, but temperatures that are too high induce even higher leakage than the samples with no heat treatment. An optimal annealing temperature was identified to be in the range of 150–200 °C. Samples annealed within this temperature window have low leakage current densities below 0.1pA∕μm2 at 10 V for film thicknesses about 100 nm. Poly(3-hexythiophene) polymer field-effect transistors (PFETs) using PPP DCTMDS gate dielectric films were fabricated and tested. Due to the high dielectric constants of PPP DCTMDS, these PFETs possess high gate capacitance and operate at low voltage.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2006
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 3
    In: Journal of Applied Physics, AIP Publishing, Vol. 106, No. 3 ( 2009-08-01)
    Abstract: High-sensitivity and low-noise electron tunneling spectroscopy was used to measure the phonon spectra via band-to-band tunneling in Si∕SiGe resonant interband tunneling diodes (RITD), tracking the effects of the weighted average Ge percentage in the central tunneling spacer. With a composite RITD tunneling barrier consisting of 4nm of intrinsic Si0.60Ge0.40 and n nm of intrinsic Si (n=4,6,8,10) all grown on Si substrates, the transverse acoustic (TA) phonon of Si0.60Ge0.40 was identified and the energy was measured to be 16±1meV. This is higher than the ∼14meV energy of the TA phonon in Si0.60Ge0.40 reported from measurements of Esaki tunnel diodes fabricated from bulk single crystals. The increase is attributed to the compressive strain in the Si0.60Ge0.40 layer grown on Si substrates. The observation of the upshift of phonon energy with strain by electron tunneling spectroscopy demonstrates the capability of electron tunneling spectroscopy to characterize residual strain.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2009
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Library Location Call Number Volume/Issue/Year Availability
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  • 4
    In: Applied Physics Letters, AIP Publishing, Vol. 87, No. 20 ( 2005-11-14)
    Abstract: Conjugated polymers, with π molecular orbitals delocalized along the polymer chain, are useful organic semiconductors that provide the possibility of molecular electronics for low-power organic-based memory and logic. Quantum functional devices based upon carrier tunneling processes open vistas into very efficient and low-power consumption circuitry that would be ideal for these applications. We demonstrate here strong room temperature negative differential resistance (NDR) for poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylenevinylene] (MEH-PPV) polymer tunnel diodes (PTD) using a thin TiO2 tunneling layer (∼2–8nm) sandwiched between the MEH-PPV and the indium tin oxide anode. A key advantage is the pronounced NDR using a thick polymer layer with a large active area, circumnavigating the need for molecularly-sized junctions. Current-voltage measurements show large and reproducible NDR with a PVCR as high as 53 at room temperature. We also demonstrate basic logic circuit operation using a pair of these PTDs connected in series to form a monostable-bistable transition logic element (MOBILE) latch.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2005
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Library Location Call Number Volume/Issue/Year Availability
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  • 5
    In: Applied Physics Letters, AIP Publishing, Vol. 93, No. 10 ( 2008-09-08)
    Abstract: Si-based resonant interband tunneling diodes (RITDs) grown on commercially available Si0.8Ge0.2 virtual substrates were studied. Peak-to-valley current ratios (PVCRs) were improved by utilizing strain induced band offsets to 3.5 with a peak current density (Jp) of 161A∕cm2. More specifically, a tensilely strained Si layer on the p-side and a compressively strained Si0.5Ge0.5 layer on the n-side were added to the design to form enhanced potential barriers away from the tunneling junction. The outside barriers deepen the respective hole and electron quantum wells and also block nonresonant tunneling current, which improved the PVCR significantly. However, due to the large surface roughness of the SiGe virtual substrates used in this study, the RITDs grown on Si0.8Ge0.2 substrates exhibit a smaller PVCR overall than RITDs optimized on standard Si substrates. Better performance is expected by using higher quality SiGe substrates with smaller surface roughness.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2008
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Library Location Call Number Volume/Issue/Year Availability
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