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  • Online-Ressource  (61)
  • AIP Publishing  (61)
  • 1990-1994  (61)
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  • Online-Ressource  (61)
Verlag/Herausgeber
  • AIP Publishing  (61)
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  • 1990-1994  (61)
Jahr
Fachgebiete(RVK)
  • 1
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 1990
    In:  Physics Today Vol. 43, No. 3 ( 1990-03-01), p. 79-80
    In: Physics Today, AIP Publishing, Vol. 43, No. 3 ( 1990-03-01), p. 79-80
    Materialart: Online-Ressource
    ISSN: 0031-9228 , 1945-0699
    RVK:
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 1990
    ZDB Id: 2031187-4
    ZDB Id: 208863-0
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 93, No. 4 ( 1990-08-15), p. 2185-2191
    Kurzfassung: An experimental (SRS) and theoretical analysis for the ν1 component of the ν1/2ν2 Fermi dyad of CO2 has been performed for densities lying from 0.01 to 50 amagat at 295 K, and from 0.01 to 20 amagat at 500 K. At subatmospheric pressure, both line mixing and Dicke narrowing take place for this component due to the very weak Q line spacings. A simple method to account for both diffusional narrowing (due to velocity changing collisions) and collisional narrowing (due to energy transfers) on isotropic Raman Q-branch profile is proposed. This method is based on the transformation of the collapsed Q-branch profile as a sum of individual Lorentzian plus dispersive components whose parameters are density-dependent. Such an exact transformation permits to easily introduce the averaging effect of velocity changing collisions on each component, and then on the collapsed Q-branch itself. In the present study, the Galatry soft collision model is used to define a generalized complete profile for each Lorentzian plus dispersive component. Such a procedure allows us to take into account the velocity changing collision’s effects not only on isolated lines (the well-known Dicke narrowing) but also on the line couplings resulting from collisionally induced rotational energy transfers. The present analysis permits an accurate description of the observed modifications on the SRS profile of the ν1 band of CO2 (1388 cm−1) as a function of density. The straightforward extension to other spectroscopies (linear and nonlinear) is suggested.
    Materialart: Online-Ressource
    ISSN: 0021-9606 , 1089-7690
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 1990
    ZDB Id: 3113-6
    ZDB Id: 1473050-9
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 1993
    In:  The Journal of Chemical Physics Vol. 99, No. 10 ( 1993-11-15), p. 7586-7594
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 99, No. 10 ( 1993-11-15), p. 7586-7594
    Kurzfassung: Electron photodetachment spectra have been measured in an ICR spectrometer for the enolate ions of acetone, cyclobutanone, cyclopentanone, cyclohexanone, cycloheptanone, methyl vinyl ketone, pinacolone, propionaldehyde, and 1,1,1-trifluoroacetone enolates. Electron affinities have been determined for acetone enolate radical 1.758±0.019, cyclobutanone enolate radical 1.801±0.008, cyclopentanone enolate radical 1.598±0.007, cyclohexanone enolate radical 1.526±0.010, cycloheptanone enolate radical 1.444+0.02/−0.002, tert-butyl methyl ketone (pinacolone) enolate radical 1.755+0.05/0.005, propionaldehyde enolate radical 1.621±0.006, and 1,1,1-trifluoroacetone enolate radical 2.625±0.010 eV. Autodetaching dipole-bound states are observed in some but not all of these spectra. The mechanism for autodetachment of these states is discussed and it is seen that the binding of an electron by a dipole is very sensitive to the motions of the dipole. The motions of the dipole can be predicted from the rotational motions of the molecule, allowing us to correlate the observation of dipole-bound states with the rotational motions of the dipole moment.
    Materialart: Online-Ressource
    ISSN: 0021-9606 , 1089-7690
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 1993
    ZDB Id: 3113-6
    ZDB Id: 1473050-9
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  • 4
    In: Journal of Applied Physics, AIP Publishing, Vol. 76, No. 9 ( 1994-11-01), p. 5300-5308
    Kurzfassung: High purity InP layers have been grown by chemical beam epitaxy using H2 as the carrier gas for transporting the metal alkyl trimethylindium into the growth chamber. InP layers exhibiting Hall mobility as high as 238 000 cm2/V s at 77 K and with a peak value of 311 000 cm2/V s at 50 K and residual Hall concentration of 6×1013 cm−3 at 77 K were grown at 500 °C using a low V/III ratio (2.2) and a phosphine (PH3) cracking cell temperature of 950 °C. The 4.2 K photoluminescence spectra were dominated by donor bound exciton (D0,X)n up to n=6 and free exciton (X) transitions for InP layers grown above 500 °C. All the InP samples exhibited very weak acceptor related photoluminescence transitions indicating very low concentration of acceptors. The energy of these transitions suggests that Mg is the major residual acceptor. Donor impurity identification by high resolution magnetophotoluminescence indicated that S and Si are the major impurities. PH3 has been found to be the major source of S impurities in the present study.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 1994
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
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  • 5
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 1994
    In:  Journal of Applied Physics Vol. 76, No. 6 ( 1994-09-15), p. 3710-3713
    In: Journal of Applied Physics, AIP Publishing, Vol. 76, No. 6 ( 1994-09-15), p. 3710-3713
    Kurzfassung: Core-level photoemission peaks taken on several insulators with spatial resolution of 30–300 μm rigidly shift in energy from place to place, most likely because of local charging effects. Such phenomena can affect the linewidth and the general lineshape of conventional, spatially integrated spectra even when a flood gun is used, which is one of the standard remedies against charging. This may require a critical revision of photoemission linewidths and lineshapes for many past experiments on insulators.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 1994
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 6
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 1994
    In:  Journal of Applied Physics Vol. 75, No. 1 ( 1994-01-01), p. 633-635
    In: Journal of Applied Physics, AIP Publishing, Vol. 75, No. 1 ( 1994-01-01), p. 633-635
    Kurzfassung: Resistivity, thermopower, and Hall-effect measurements on large single crystals of the anatase form of TiO2 all indicate high mobility n-type carriers that are produced by thermal excitation from a density of ∼1018 cm−3 putatively present shallow donor states. The decrease of the mobility with increasing temperature is consistent with the scattering of carriers by the optical phonons of TiO2.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 1994
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
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  • 7
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 1994
    In:  Journal of Applied Physics Vol. 75, No. 6 ( 1994-03-15), p. 2945-2951
    In: Journal of Applied Physics, AIP Publishing, Vol. 75, No. 6 ( 1994-03-15), p. 2945-2951
    Kurzfassung: Photoemission spectromicroscopy was used to investigate the electronic structure of TiO2 anatase single crystals and polycrystalline thin films. The stoichiometry and the degree of oxidation of as-grown crystals, as-deposited films, as well as of thermally annealed samples in different atmospheres, were analyzed, based on the Ti 2p and O 1s core levels, with an energy resolution of 0.4 eV. The experimental density of states (DOS) was found to be in agreement with the theoretical DOS reported in the literature for anatase crystals, and shows some characteristics similar to the experimental DOS reported for rutile crystals. In reduced samples, the experimental DOS is characterized by intense emission in the region of O 2p bonding orbitals, and does not exhibit an appreciable density of states in the band gap. As-grown crystals exhibit small band gap emission (a few percent of the valence band VB signal) at about 0.8 eV, which is attributed to Ti3+ (3d) defect states. Annealing the crystals at high temperatures in O2 or subsequent thermal reduction in an Ar–H2 mixture (95%–5%) produces nearly stoichiometric surfaces with smaller or undetectable density of Ti3+ states. In addition, some redistribution of the spectral weight is observed in the VB spectra.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 1994
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 8
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 1993
    In:  Journal of Applied Physics Vol. 73, No. 8 ( 1993-04-15), p. 4095-4097
    In: Journal of Applied Physics, AIP Publishing, Vol. 73, No. 8 ( 1993-04-15), p. 4095-4097
    Kurzfassung: We have investigated the doping incorporation and activation of InP growth using metalorganic chemical vapor deposition on & lt;100≳, & lt;311≳B, and & lt;110≳ InP substrates. Effects of orientation, growth temperature, and V/III fluxes were studied. The dopants used were Zn from dimethylzinc [(CH3)2Zn] and diethylzinc [(C2H5)2Zn] , S from hydrogen sulfide [H2S], Si from silane [SiH4] , and Sn from tetraethyltin [(C2H5)4Sn]. The incorporation and activation of the p-type dopant Zn are elevated on the & lt;311≳B and & lt;110≳ planes, while the incorporation is suppressed for the n-type dopants (S, Si, and Sn). The n-type dopant Sn has similar incorporation and activation on the various substrate orientations studied. Anomalous Zn doping on the higher order planes & lt;311≳B and & lt;110≳ lead to the Zn incorporation exceeding the solubility limit in InP. Incorporated Zn levels as high as 1.0×1019 cm−3 were measured, and the corresponding activated Zn level was as high as 5.4×1018 cm−3 on a & lt;110≳ InP substrate. Interdiffusion of the p-type dopant Zn into the S-doped n-type InP substrate is inhibited by a high S-doping level and segregates at the substrate–epilayer interface. If the S-doping level is lower than the Zn concentration, then Zn diffuses deep into the substrate at a uniform level.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 1993
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 9
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 1994
    In:  Journal of Applied Physics Vol. 76, No. 8 ( 1994-10-15), p. 4787-4792
    In: Journal of Applied Physics, AIP Publishing, Vol. 76, No. 8 ( 1994-10-15), p. 4787-4792
    Kurzfassung: Rectangular current pulses of duration 0.14 μs, flowing across Bloch domain walls in Ni81Fe19 films, cause displacements Δx of these walls, observable by Kerr-contrast microscopy. In zero magnetic field, Δx reaches ≂14 μm/pulse at current densities ≂30% above the value jc where wall motion starts. This critical current density is jc≂1.2×1010 A/m2 for a film thickness w=263 nm. We have measured jc versus film thickness for w=120–740 nm, and find jc∝w−2.1. This suggests strongly that the observed wall motion is associated with an S-shaped distortion of the wall by the circumferential magnetic field of the current. This wall distortion is limited by the wall surface tension. The wall structure becomes that of the so-called asymmetric Néel wall. Through wall distortion, the current pulse pumps kinetic energy and momentum into the wall. This kinetic energy is then dissipated during ballistic wall motion happening largely after the end of the pulse. We also find jc to be independent of pulse duration.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 1994
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 10
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 1991
    In:  Journal of Applied Physics Vol. 70, No. 10 ( 1991-11-15), p. 5825-5827
    In: Journal of Applied Physics, AIP Publishing, Vol. 70, No. 10 ( 1991-11-15), p. 5825-5827
    Kurzfassung: A Ni81Fe19 film of 110 nm thickness is traversed by a dc current density normal to the easy axis. Two sharp tungsten wires serve as potential probes, distant by 210 μm along the easy axis. A charged wall, oriented at an angle to the easy axis, is made to creep slowly across the sample by applying dc easy axis and 60-Hz hard axis magnetic fields. The dc voltage between the probes is found to vary whenever the wall passes by the probes. The variation has the form of a voltage peak of ≂40 μV typical height. These peaks are caused by the planar Hall effect, in combination with a canting of the domain magnetization near the charged wall. In the case of a current parallel to the easy axis and normal to the line joining the probes, a steplike voltage variation ≤150 μV is observed for an uncharged wall in the presence of a dc hard axis field. Planar Hall effect and (field induced) domain canting are again responsible.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 1991
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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