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  • AIP Publishing  (119)
  • English  (119)
  • 1
    Online Resource
    Online Resource
    AIP Publishing ; 1965
    In:  The Journal of Chemical Physics Vol. 43, No. 9 ( 1965-11-01), p. 3395-3396
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 43, No. 9 ( 1965-11-01), p. 3395-3396
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1965
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 2
    Online Resource
    Online Resource
    AIP Publishing ; 1974
    In:  The Journal of Chemical Physics Vol. 60, No. 5 ( 1974-03-01), p. 1797-1801
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 60, No. 5 ( 1974-03-01), p. 1797-1801
    Abstract: The ultraviolet spectra of Mo isolated in Ar, Kr, and Xe matrices at 14°K have been correlated with the gas phase spectra. Contrary to the interpretations of the spectra of the P ← S transitions of a number of matrix isolated atoms, no crystal field effects leading to a breaking of the orbital degeneracy are required in order to obtain a satisfactory explanation of the spectra. The different matrices affect the spin-orbit coupling and configuration interaction of the Mo atom leading to changes in the triplet splittings of the y7P ← a7S transition. The diffusion of Mo atoms in an Ar matrix lead to the formation of polymers. No definitive assignment of bands to the dimer could be made.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1974
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 3
    Online Resource
    Online Resource
    AIP Publishing ; 1973
    In:  The Journal of Chemical Physics Vol. 58, No. 9 ( 1973-05-01), p. 4028-4029
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 58, No. 9 ( 1973-05-01), p. 4028-4029
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1973
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 4
    Online Resource
    Online Resource
    AIP Publishing ; 1996
    In:  Journal of Applied Physics Vol. 79, No. 7 ( 1996-04-01), p. 3541-3547
    In: Journal of Applied Physics, AIP Publishing, Vol. 79, No. 7 ( 1996-04-01), p. 3541-3547
    Abstract: A model is presented to interpret in situ laser reflectance interferometry (LRI) measurements of film growth. The model uses no adjustable parameters and measures film thickness, growth rate, attenuation, and root-mean-square (rms) surface roughness in situ and in real time. For the particular case of diamond film growth on silicon substrates, it is shown that the assumptions of the model are satisfied, and that film properties determined in situ by LRI and by various means ex situ are in good agreement. With this model, the evolution of diamond film properties are followed under typical diamond growth conditions using mixtures of CH4 and H2. In agreement with texture formation models, the growth rate and surface roughness were observed to increase as film growth progressed. The growth rate was found to be proportional to CH4 fraction for CH4 fractions less than 8.5%. At higher CH4 fractions, the growth rate decreased and significant attenuation was observed.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 5
    Online Resource
    Online Resource
    AIP Publishing ; 1998
    In:  Journal of Applied Physics Vol. 84, No. 4 ( 1998-08-15), p. 1981-1989
    In: Journal of Applied Physics, AIP Publishing, Vol. 84, No. 4 ( 1998-08-15), p. 1981-1989
    Abstract: The transition from microcrystalline to nanocrystalline diamond films grown from Ar/H2/CH4 microwave plasmas has been investigated. Both the cross-section and plan-view micrographs of scanning electron microscopy reveal that the surface morphology, the grain size, and the growth mechanism of the diamond films depend strongly on the ratio of Ar to H2 in the reactant gases. Microcrystalline grain size and columnar growth have been observed from films produced from Ar/H2/CH4 microwave discharges with low concentrations of Ar in the reactant gases. By contrast, the films grown from Ar/H2/CH4 microwave plasmas with a high concentration of Ar in the reactant gases consist of phase pure nanocrystalline diamond, which has been characterized by transmission electron microscopy, selected area electron diffraction, and electron energy loss spectroscopy. X-ray diffraction and Raman spectroscopy reveal that the width of the diffraction peaks and the Raman bands of the as-grown films depends on the ratio of Ar to H2 in the plasmas and are attributed to the transition from micron to nanometer size crystallites. It has been demonstrated that the microstructure of diamond films deposited from Ar/H2/CH4 plasmas can be controlled by varying the ratio of Ar to H2 in the reactant gas. The transition becomes pronounced at an Ar/H2 volume ratio of 4, and the microcrystalline diamond films are totally transformed to nanocrystalline diamond at an Ar/H2 volume ratio of 9. The transition in microstructure is presumably due to a change in growth mechanism from CH3⋅ in high hydrogen content to C2 as a growth species in low hydrogen content plasmas.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 6
    Online Resource
    Online Resource
    AIP Publishing ; 1983
    In:  The Journal of Chemical Physics Vol. 79, No. 12 ( 1983-12-15), p. 5887-5893
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 79, No. 12 ( 1983-12-15), p. 5887-5893
    Abstract: Irradiation into either of the two resonance transitions of Cr atoms in Kr matrices results in strong bleaching of the atomic absorptions and simultaneous growth of two Cr2 dimer bands. The lower energy band of Cr2 at ∼470 nm is the well-known 1Σ+u → 1Σ+g transition. The higher energy band at ∼340 nm we assign to the 1Πu ← 1Σ+g transition which occurs at almost the same energy as, and is therefore obscured by, the y7P0 ← a7S transition of normally present Cr atoms in Kr (and Ar) matrices. Laser induced fluorescence from the ∼470 nm band gives a broad, featureless emission presumably because of extensive predissociation after cage relaxation of the excited 1Σ+u state. Emission after excitation of 1Πu ← 1Σ+g transition yields a four member progression with spacing of ∼240 cm−1. The spectrum is consistent with emission from a 3Σg ‘‘trap’’ level to a lower lying 3Σu state, ∼8000 cm−1 above ground. An energy level diagram of the Cr2 molecule is presented which incorporates all of the spectroscopic information available on the dimer.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1983
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 7
    Online Resource
    Online Resource
    AIP Publishing ; 1998
    In:  Journal of Applied Physics Vol. 83, No. 1 ( 1998-01-01), p. 540-543
    In: Journal of Applied Physics, AIP Publishing, Vol. 83, No. 1 ( 1998-01-01), p. 540-543
    Abstract: Nanocrystalline diamond thin films have been synthesized in an Ar–CH4 microwave discharge, without the addition of molecular hydrogen. X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy characterizations show that the films consist of a pure crystalline diamond phase with very small grain sizes ranging from 3 to 20 nm. Atomic force microscopy analysis demonstrates that the surfaces of the nanocrystalline diamond films remain smooth independent of the film thicknesses. Furthermore, the reactant gas pressure, which strongly affects the concentration of C2 dimer in the Ar–CH4 plasma as well as the growth rate of the films, has been found to be a key parameter for the nanocrystalline diamond thin film depositions.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 8
    Online Resource
    Online Resource
    AIP Publishing ; 1994
    In:  Journal of Applied Physics Vol. 75, No. 3 ( 1994-02-01), p. 1758-1763
    In: Journal of Applied Physics, AIP Publishing, Vol. 75, No. 3 ( 1994-02-01), p. 1758-1763
    Abstract: Microwave discharges (2.45 GHz) have been generated in C60-containing Ar. The gas mixtures were produced by flowing Ar over fullerene-containing soot at a variety of temperatures. Optical spectroscopy shows that the spectrum is dominated by the d 3Πg–a  3Πu Swan bands of C2 and particularly the Δv=−2, −1, 0, +1, and +2 sequences. These results give direct evidence that C2 is in fact one of the products of C60 fragmentation brought about, at least in part, by collisionally induced dissociation. C60 has been used as a precursor in a plasma-enhanced chemical vapor deposition experiment to grow diamond-thin films. The films, grown in an Ar/H2 gas mixture (0.14% carbon content, 100 Torr, 20 sccm Ar, 4 sccm H2, 1500 W, 850 °C substrate temperature) were characterized with scanning electron microscopy, x-ray diffraction, and Raman spectroscopy. The growth rate was found to be ∼0.6 μm/h. Assuming a linear dependence on carbon concentration, a growth rate at least six times higher than commonly observed using methane as a precursor would be predicted at a carbon content of 1% based on C60. Energetic and mechanistic arguments are advanced to rationalize this result based on C2 as the growth species.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1994
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 9
    In: Journal of Applied Physics, AIP Publishing, Vol. 82, No. 9 ( 1997-11-01), p. 4546-4550
    Abstract: Nanocrystalline diamond films have been synthesized by microwave plasma enhanced chemical vapor deposition using N2/CH4 as the reactant gas without additional H2. The nanocrystalline diamond phase has been identified by x-ray diffraction and transmission electron microscopy analyses. High resolution secondary ion mass spectroscopy has been employed to measure incorporated nitrogen concentrations up to 8×1020 atoms/cm3. Electron field emission measurements give an onset field as low as 3.2 V/μm. The effect of the incorporated nitrogen on the field emission characteristics of the nanocrystalline films is discussed.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 10
    Online Resource
    Online Resource
    AIP Publishing ; 1992
    In:  Journal of Applied Physics Vol. 72, No. 6 ( 1992-09-15), p. 2385-2389
    In: Journal of Applied Physics, AIP Publishing, Vol. 72, No. 6 ( 1992-09-15), p. 2385-2389
    Abstract: The stability of the Bi2−xPbxSr2Ca2Cu3O10 (Pb-2223) phase contained in silver-sheathed oxide-powder-in-tube specimens has been investigated by x-ray diffraction, transmission electron microscopy, and energy dispersive x-ray analysis. Silver tubes loaded with Pb-2223 precursor powders were processed into tapes using established metallurgical techniques. The tapes were heat-treated in a specially designed equilibration apparatus at selected temperatures (800–845 °C) for a range of times (10–5500 min) and quenched in liquid gallium held at ∼40 °C. The results showed that the Pb-2223 phase is stable in a limited temperature interval between 810 and 830 °C in 7.5% oxygen. At 800 °C, this phase decomposes to Bi2Sr2CaCu2O8 (2212), Ca2PbO4, and CuO; while at temperatures ≥840 °C it partially melts with precipitation of Bi2Sr2CuO6 (2201) and Ca2CuO3. The effects of the silver cladding on the Pb-2223 phase stability and microstructure are also discussed.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1992
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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