In:
Applied Physics Letters, AIP Publishing, Vol. 75, No. 21 ( 1999-11-22), p. 3297-3299
Abstract:
The first- and second-order Raman scattering and IR reflection have been studied for hexagonal InN layers grown on (0001) and (11̄02) sapphire substrates. All six Raman-active optical phonons were observed and assigned: E2(low) at 87 cm−1, E2(high) at 488 cm−1, A1(TO) at 447 cm−1, E1(TO) at 476 cm−1, A1(LO) at 586 cm−1, and E1(LO) at 593 cm−1. The ratio between the InN static dielectric constants for the ordinary and extraordinary directions was found to be ε⊥0/ε∥0=0.91. The phonon dispersion curves, phonon density-of-state function, and lattice specific heat were calculated. The Debye temperature at 0 K for hexagonal InN was estimated to be 370 K.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1999
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
Bookmarklink