In:
Journal of Applied Physics, AIP Publishing, Vol. 112, No. 11 ( 2012-12-01)
Abstract:
We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO2±x grown by reactive molecular beam epitaxy. The oxidation conditions induce a switching between (1¯11) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and p-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2012
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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