In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 26, No. S3-1 ( 1987-01-01), p. 619-
Abstract:
Switching is observed from a state with high resistance to a state with lower resistance in the current-voltage characteristics of some (NbSe 4 ) 3 I crystals of type II. As temperature is lowered from 140 to 110 K, the threshold current decreases by about ten, while the threshold voltage does not change with temperature. These results are interpreted in terms of the depinning and the ánd the sliding motion of charge density waves in (NbSe 4 ) 10/3 I domains the inclusion of which is responsible for a much larger increase in the resistivity at low temperatures in type II crystals than in type I crystals.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAPS.26S3.619
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1987
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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