In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 2R ( 2011-02-01), p. 021401-
Abstract:
Improving the device structure and quality of polycrystalline silicon (poly-Si) films is essential for enhancing the performance of poly-Si thin-film transistors (TFTs). A multigate structure can potentially be used to realize ideal poly-Si TFTs. We combined a self-aligned metal double-gate structure (i.e., a structure with metal top and bottom gates) with a large-grained poly-Si film. Then, we fabricated high-performance n-channel (n-ch) and p-channel (p-ch) low-temperature poly-Si TFTs on a glass substrate at 550 °C. The nominal field-effect mobilities of the n-ch and p-ch TFTs were 638 and 156 cm 2 V -1 s -1 , respectively, and the s -values of both the TFTs were nearly 130 mV/dec.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.021401
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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