In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 12S ( 1992-12-01), p. 4555-
Kurzfassung:
We report a novel growth method of polysilicon thin films on glass substrates at a low temperature (450°C) by plasma chemical vapor deposition (PCVD) using SiH 4 /SiF 4 mixture gases. In this method, the conventional low-cost glass substrates such as Corning 7059 may be used because of the low deposition temperature. Furthermore, the conventional vacuum chamber with its base pressure of ∼1×10 -4 Pa, which is usually thought to be inadequate for high-quality Si growth because of its many impurities, can be used since the growing surface of polysilicon is in-situ chemically cleaned by SiF 4 plasma. The polysilicon films obtained on glass show strong (100) preferred orientation. A grain size as large as 250 nm is obtained in a film with 700 nm thickness. The field-effect mobility of 44 cm 2 /V·s has been achieved in a thin-film transistor (TFT) using this polysilicon film.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.31.4555
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1992
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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