In:
ECS Transactions, The Electrochemical Society, Vol. 19, No. 23 ( 2009-10-02), p. 69-75
Abstract:
Field-plated (FP) AlGaN/GaN high electron mobility transistor (HEMT) has been fabricated and characterized for microwave applications. After the implement of the FP structure, lower trans-conductance (Gm) was observed on DC and small signal characteristics of the GaN power HEMT. Even FP-HEMT showed lower linear gain, the devices still exhibited higher output power and higher power added efficiency than conventional HEMT. However, lower trans-conductance and higher gate-drain capacitance (Cgd) didn't influence the linearity characteristics of the FP-HEMT. Finally, a 100μm GaN power HEMT on sapphire was fabricated with linear gain of 15.39dB, outpout power of 25.36dBm, and power added efficiency of 43%. The device also demonstrated high linearity of -27.1dBc for IMD3 and 33.88dBc for ACPR when biased at drain voltage of 30V with current density of 15mA/mm at 2GHz.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2009
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