In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 32, No. 1 ( 2014-01-01)
Abstract:
This study examined the effect of sputtering power on the performance of zinc-tin-oxide field-effect transistors and the stability under photobias stress. Large improvements in the saturation mobility and subthreshold swing were found in devices fabricated at higher sputtering powers; 13.80 cm2/V·s, 0.33 V/decade at a power of 400 W compared with 2.70 cm2/V·s, 1.19 V/decade at a power of 50 W. The threshold voltage shift under negative bias illumination stress (NBIS) for the device fabricated at a power of 400 W shows superior properties (−2.41 V) compared with that (−5.56 V) of the device fabricated at 50 W. The improvements in electrical performance and NBIS stability were attributed to the formation of a denser film and the reduced dielectric/channel interfacial trap densities due to the more energetic bombardment used under high power sputtering conditions.
Type of Medium:
Online Resource
ISSN:
2166-2746
,
2166-2754
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2014
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
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