In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 16, No. 5 ( 2001-05), p. 1520-1524
Kurzfassung:
Undoped and Sm 3+ -doped BaAl 2 S 4 and BaAl 2 Se 4 single crystals were grown by the chemical transport reaction method. The optical energy band gaps of the BaAl 2 S 4 and BaAl 2 Se 4 were found to be 4.10 and 3.47 eV, respectively, at 5 K. In their photoluminescence spectra measured at 5 K, broad emission peaks at 459 and 601 nm appeared in the BaAl 2 S 4 and at 486 and 652 nm in the BaAl 2 Se 4 . These emissions are assigned to donor–acceptor pair recombinations. Sharp emission peaks were observed in the Sm 3+ -doped BaAl 2 S 4 and BaAl 2 Se 4 single crystals at 5 K. Taking into account the ionic radii of the cations and Sm 3+ , these sharp emission peaks are attributed to the electron transitions between the energy levels of Sm 3+ substituting with the Ba site.
Materialart:
Online-Ressource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/JMR.2001.0211
Sprache:
Englisch
Verlag:
Springer Science and Business Media LLC
Publikationsdatum:
2001
ZDB Id:
54876-5
ZDB Id:
2015297-8
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