In:
Applied Physics Letters, AIP Publishing, Vol. 78, No. 11 ( 2001-03-12), p. 1505-1507
Abstract:
In molecular-beam epitaxy a monolayer of Pb on the Si(111) surface induces single-crystal growth at temperatures well below those required for similar growth on a bare surface. We demonstrate that the suppression of dopant segregation at the lower temperatures attainable by Pb-mediated growth allows the incorporation of As donors at concentrations reaching a few atomic percent. When Pb and Si are deposited on an As-terminated Si(111) substrate at 350 °C, the Pb segregates to the surface without doping the Si film while the As is buried within nanometers of the substrate–film interface. The resulting concentration of electrically active As, 1.8×1021 cm−3, represents the highest concentration of As donors achieved by any delta-doping or thin-film deposition method.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2001
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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