In:
Applied Physics Express, IOP Publishing, Vol. 9, No. 6 ( 2016-06-01), p. 061501-
Abstract:
In this letter, we inserted a low dielectric constant (low- k ) or high dielectric constant (high- k ) material as a switching layer in indium–tin-oxide-based resistive random-access memory. After measuring the two samples, we found that the low- k material device has very low operating voltages (−80 and 110 mV for SET and RESET operations, respectively). Current fitting results were then used with the COMSOL software package to simulate electric field distribution in the layers. After combining the electrical measurement results with simulations, a conduction model was proposed to explain resistance switching behaviors in the two structures.
Type of Medium:
Online Resource
ISSN:
1882-0778
,
1882-0786
DOI:
10.7567/APEX.9.061501
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
2417569-9
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