In:
Journal of Raman Spectroscopy, Wiley, Vol. 50, No. 5 ( 2019-05), p. 755-761
Abstract:
The phase transition of molybdenum ditelluride (MoTe 2 ) has aroused great interest for enormous potential application in two‐dimensional (2D) optoelectronic sensors and nonvolatile information storage. Many in situ synthesis such as chemical vapor deposition and tellurization of Mo as well as postgrowth methods including thermal and strain engineering have been reported to realize the 2H‐to‐1T′ phase transition in MoTe 2 . Laser irradiation as one of thermal engineering has been demonstrated to be efficient and convenient for phase transition in MoTe 2 flakes, but the substrate effect especially the thermal conductivity of substrate has not been studied. In this work, we systematically investigate the effect of four substrates (SiO 2 , Si, PDMS, and GaAs) with different thermal conductivities on the laser‐induced phase transition of MoTe 2 . The evolutions of Raman spectra clearly reveal the phase transition from 2H to 1T′ phase in MoTe 2 on four different substrates with the increase in laser power. The laser power required for the phase transition is proportional to the substrate thermal conductivity. The PDMS substrate with the lowest thermal conductivity of 0.35 W/MK requires the lowest laser power of 2 mW to complete the phase transition. We have also fabricated a micro pattern heterostructure through artificial manipulation of the laser beam. Our work may provide valuable insights on the laser‐induced phase transition in MoTe 2 and be helpful for phase transition of other TMDs.
Type of Medium:
Online Resource
ISSN:
0377-0486
,
1097-4555
Language:
English
Publisher:
Wiley
Publication Date:
2019
detail.hit.zdb_id:
1481008-6
SSG:
11
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