In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 6R ( 2001-06-01), p. 3992-
Abstract:
The effective channel length of a metal-oxide-semiconductor (MOS) transistor is usually extracted using current–voltage ( I – V ) methods. In a current MOS transistor, local surface channel mobility degradation due to halo implants used for obtaining better short channel performance in deep-quarter micron devices degrades the extraction accuracy of the value of effective channel length ( L eff ). This paper describes an experimental wafer split under varying halo implant conditions implemented to determine the accuracy of the L eff values extracted using various methods based on the advanced 0.15 µm complementary metal-oxide-semiconductor (CMOS) technology. The integrated systems engineering technology computer-aided design (ISE TCAD) two-dimensional (2D) simulation tool and a modified capacitance–voltage ( C – V ) method were adopted to help determine the metallurgical channel-length L met for each transistor under various halo implant conditions. The relationships between L met and L eff values extracted using various methods (including I – V and C – V methods) were also compared. In using the proposed modified C – V method [capacitance–ratio ( C – R ) method], more consistent and reasonable L eff data can be obtained even when a heavy halo implant dose is used.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.3992
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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