In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 14, No. 8 ( 1999-08), p. 3226-3236
Abstract:
The relationship between the defect microstructure of SiC films grown by solid-source molecular-beam epitaxy on 4H and 6H–SiC substrates and their growth conditions, for substrate temperatures ranging between 950 and 1300 °C, has been investigated by a combination of transmission electron microscopy and atomic force microscopy. The results demonstrate that the formation of defective cubic films is generally found to occur at temperatures below 1000 °C. At temperatures above 1000 °C our investigations prove that simultaneous supply of C and Si in the step-flow growth mode on vicinal 4H and 6H substrate surfaces results in defect-free hexagonal SiC layers, and defect-free cubic SiC can be grown by the alternating deposition technique. The controlled overgrowth of hexagonal on top of cubic layers is demonstrated for thin layer thicknesses.
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/JMR.1999.0436
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1999
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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