In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 4S ( 2013-04-01), p. 04CC28-
Abstract:
The influence of structural parameters, including the Schottky barrier height for electron (φ Bn ) and channel doping ( N a ), on the electrical characteristics of a scaled Schottky barrier tunneling FET (SBTFET) have been clarified by numerical device simulation. The thermionic emission current ( I TH ) as well as the tunneling current ( I TN ) have been considered as the main electron injections at the source edge. Simulation results have revealed that the main conduction is I TN in the region near and above the threshold voltage ( V th ). As tunneling probability is determined by φ Bn and the width of the triangular potential barrier at the source edge, a lower φ Bn with higher N a results in a better subthreshold swing (SS) with high on-state drive current ( I ON ) at a gate length ( L g ) of 50 nm. With L g scaling down to 10 nm, however, a lower φ Bn has shown an increased off-state leakage current ( I OFF ) due to the short-channel effect (SCE), while a larger φ Bn can suppress the I OFF at the cost of I ON . Therefore, considering SS with I ON and I OFF ratio, it can be concluded that an optimum φ Bn exists for short-channel devices. The SBTFET showed good subthreshold performance and higher I ON / I OFF than the conventional silicon-on-insulator (SOI) MOSFET in 10 nm region with the Schottky barrier height optimization.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.04CC28
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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