In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 6L ( 2005-06-01), p. L781-
Abstract:
Compact C 2 F 4 gas supply equipment, which controls the gas supply with sufficient accuracy by irradiation of a carbon dioxide laser (CO 2 ) onto a solid source (PTFE) without using any fluorocarbon gas, has been developed to combat global warming. Although C 2 F 4 gas has a very low Global Warming Potential (GWP 〈 1), it is very unstable and thus considerably difficult to handle. This gas is used in the semiconductor manufacture process, where it is obtained from a conventional high-pressure cylinder. By changing the output of the laser, the amount of C 2 F 4 gas generated can be precisely controlled in this equipment while also ensuring safety. The gas is supplied to the VHF excited parallel plate plasma reactor through a gas shower head with Ar carrier gas and, in actual tests, this environmental benign technology achieved high etching performances for low- k SiOCH and SiO 2 films.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.L781
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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