In:
physica status solidi c, Wiley, Vol. 8, No. 10 ( 2011-10), p. 3017-3020
Abstract:
We present production of silicon nano‐particles and their surface nitridation for efficient multiple‐exciton generation. Nitridated silicon nano‐particles were produced using double multi‐hollow discharge plasma CVD, where generation of silicon particles and their nitridation were independently performed using SiH 4 /H 2 and N 2 multi‐hollow discharge plasmas. We succeeded in controlling nitrogen content in a silicon nano‐particle by varying a number density of N radicals irradiated to the Si particle. We also observed strong photoluminescence (PL) emission around 300‐500 nm from silicon nano‐particles, where the PL peak energy is about 2.5 and 3.1 eV for pure Si nano‐particles, and 2.5, 3.1, and 4.1 eV for nitridated Si nano‐particles. The additional UV‐peak of 4.1 eV from nitridated Si particles is closely related to the nitridation surface layer on Si nano‐particles (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Type of Medium:
Online Resource
ISSN:
1862-6351
,
1610-1642
DOI:
10.1002/pssc.201001230
Language:
English
Publisher:
Wiley
Publication Date:
2011
detail.hit.zdb_id:
2105580-4
detail.hit.zdb_id:
2102966-0
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