In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 24, No. 6A ( 1985-06-01), p. L431-
Abstract:
Using Si atomic-planar-doping technology, a new heterostructure, called “Planar-Doped Quantum Well (PD-QW) Heterostructure”, which has a single Si-doped Ga plane with sheet concentration of 0.6–4 ×10 12 cm -2 in an AlAs-GaAs-AlAs quantum well structure as a 2DEG supplying layer was developed. It exhibited 2DEG mobility of 8.7 ×10 4 cm 2 /Vs at 77 K with sheet concentration of 1.0 ×10 12 cm -2 , in addition to much reduced persistent photoconductivity at low temperatures. The sheet resistivity of the 2DEG layer in this material (about 70 Ω/\Box at 77 K) is the lowest observed so far in selectively doped single-interface heterostructures.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.24.L431
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1985
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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