In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 52, No. 1 ( 2003), p. 217-
Abstract:
AMPS simulator, which was developed by Pennsylvania State University, has been used to simulate photovoltaic performances of nc-Si:H/ c-Si solar cells. It is shown that interface states are essential factors prominently influencing open circuit voltages (VOC) and fill factors (FF) of these structured solar cells. Short circuit current density (JSC) or spectral response seems more sensitive to the thickness of intrinsic a-Si:H buffer layers inserted into n+-nc-Si:H layer and p-c-Si substrates. Impacts of bandgap offset on solar cell performances have also been analyzed. As ΔEC increases, degradation of VOC and FF owing to interface states are dramatically recovered. This implies that the interface state cannot merely be regarded as carrier recombination centres, and impacts of interfacial layer on devices need further investigation. Theoretical maximum efficiency of up to 3117%(AM15, 100mW/cm2, 040—11μm) has been obtained with BSF structure, idealized light-trapping effect(RF=0, RB=1) and no interface states.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2003
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