In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 9R ( 2012-09-01), p. 090116-
Abstract:
The device parameters of a novel diamond diode, namely, a Schottky-pn diode (SPND), are analyzed to realize a fast switching time, a low on-resistance, and a high blocking voltage simultaneously. The SPND is composed of an n-type active layer sandwiched between a highly doped p + -type layer and a Schottky metal. The key structure is the fully depleted n-type layer. From the simulations of the energy band diagram based on the key structure of the SPND using Poisson's equations, it is concluded that the low donor density in the n-type layer and the high acceptor density in the p + -type layer are key points for the high-performance SPND.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.090116
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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