feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
  • 1
    Online-Ressource
    Online-Ressource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2021
    In:  Acta Physica Sinica Vol. 70, No. 13 ( 2021), p. 136801-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 70, No. 13 ( 2021), p. 136801-
    Kurzfassung: In recent years, all-solid-state thin-film batteries have been used to power low-energy devices such as microchips, smart cards, microelectromechanical systems, wireless sensors, and implantable medical devices. All-solid-state thin-film batteries have become an important research direction of rechargeable solid-state batteries (SSBs). However, the solid-solid interface between electrodes and electrolytes seriously affects the further improvement of battery performance, which has attracted extensive attention. Lithium phosphorus oxynitride (LiPON) was found to be a useful inorganic electrolyte in lithium batteries because of its favorable electrochemical properties. For instance, LiPON has good electrical and chemical stability, negligible electronic conductivity and excellent cyclability as well as ease of integration with thin film battery with an electrochemical stability window. The LiPON can present two states, 〈i〉i.e.〈/i〉 amorphous state and crystalline state. Here, we adopt 〈i〉ab initio〈/i〉 molecular dynamics to study amorphous-LiPON/Li(100) interface and crystalline-Li〈sub〉2〈/sub〉PO〈sub〉2〈/sub〉N(100)/Li(100) interface. Our results demonstrate that the atomic inter-diffusion occurs in the interfacial region, forming a thin interfacial layer, and the ionic conductivity is increased after the interface layer has formed. Meanwhile, comparing with the Lipon bulk phase structure, the proportion of Li[O〈sub〉2〈/sub〉N〈sub〉2〈/sub〉], Li[O〈sub〉3〈/sub〉N], and Li[O〈sub〉4〈/sub〉] tetrahedral local structure in the interface layer with Li atom as the center decrease obviously, and the average coordination number of Li-O, Li-N, P-O, and P-N in the interfacial layers also decrease in the LiPON/Li interface. Due to the change of structure and coordination number at the interface, the ionic bonds between Li and O, N are weaker, which explains the increase of ionic conductivity at the LiPON/Li interface. Previous experiments showed that element interdiffusion occurs at the LiPON/Li interface and the interface layer is formed, and found that the decrease in impedance of the interface layer can confirm that the ionic conductivity of the interface layer indeed increases. In addition, the tetrahedral structure of the interface layer will be decomposed into other smaller structures. Our computational results are consistent with the previous experimental results, which indicates the rationality and reliability of our conclusion. This feature plays a positive role in promoting the performance of LiPON electrolytes in practical battery applications.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2021
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 2
    Online-Ressource
    Online-Ressource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2023
    In:  Acta Physica Sinica Vol. 72, No. 18 ( 2023), p. 184204-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 72, No. 18 ( 2023), p. 184204-
    Kurzfassung: 〈sec〉Compared with traditional communication technologies such as electrical interconnection, optical interconnection technology has the advantages of large bandwidth, low energy consumption, anti-interference, etc. Therefore, optical interconnection is becoming an important approach and development trend of short distance and very short distance data terminal communication. As the chip level optical interconnection is implemented, silicon on insulator (SOI) based on-chip optical interconnection has been widely utilized with the support of a series of multiplexing technologies. In recent decades, many on-chip optical interconnection devices have been developed by using conventional design methods such as coupled-mode, multimode interference, and transmission line theories. However, when used in device design, these conventional methods often face the problems such as complex theoretical calculations and high labor costs. Many of the designed devices also encounter the problems of insufficient compactness and integration, and single function.〈/sec〉〈sec〉Intelligent design method has the advantages such as pellucid principle, high freedom of optimization, and good material compatibility, which can solve the problems of conventional design methods to a large extent. With the widespread use of intelligent design methods in the design of on-chip optical interconnection devices, three main trends have emerged. Firstly, the size of on-chip optical interconnect device is gradually developing towards ultra compact size. Secondly, the number of intelligently designed controllable on-chip optical interconnect devices is increasing. Thirdly, on-chip optical interconnect devices are gradually developing towards integration and systematization. This paper summarizes the most commonly used intelligent design methods of photonic devices, including intelligent algorithms based intelligent design methods and neural networks based intelligent design methods. Then, the above three important research advances and trends of intelligently designed on-chip optical interconnection devices are analyzed in detail. At the same time, the applications of phase change materials in the design of controllable photonic devices are also reviewed. Finally, the future development of intelligently designed on-chip optical interconnection devices is discussed.〈/sec〉
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2023
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie auf den KOBV Seiten zum Datenschutz