In:
Journal of Applied Physics, AIP Publishing, Vol. 109, No. 10 ( 2011-05-15)
Abstract:
Iron doped amorphous carbon (a-C: Fe) films on n-Si substrates were fabricated by pulse laser deposition technique. Barrier heights of the heterojunctions, measured in the electrical methods, were found to decrease gently below 300 °C and then increase anomalously thereafter. An interface energy band model was proposed to interpret the band structure of the heterojunctions as well as to calculate bandgaps of the a-C: Fe films. The abnormal increase in the barrier heights above 300 °C was attributed to the narrowing of π and π* bands due to the increased ordering degree of the sp2 clusters in a-C films, which was verified in Raman spectra and electron energy loss spectroscopy.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2011
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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