In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 53, No. 3 ( 2014-03-01), p. 034202-
Abstract:
It is demonstrated from a statistical perspective that the generation of random telegraph noise (RTN) changes before and after the application of negative-bias temperature instability (NBTI) stress. The NBTI stress generates a large number of permanent interface traps and, at the same time, a large number of RTN traps causing temporary RTN and one-time RTN. The interface trap and the RTN trap show different features in the recovery process. That is, a re-passivation of interface states is the minor cause of the recovery after the NBTI stress, and in contrast, rapid disappearance of the temporary RTN and the one-time RTN is the main cause of the recovery. The RTN traps are less likely to become permanent. This two-type trap, namely, the interface trap and RTN trap, model simply explains NBTI degradation and recovery in scaled p-channel metal–oxide–semiconductor field-effect transistors.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.53.034202
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2014
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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