In:
Applied Physics Letters, AIP Publishing, Vol. 92, No. 4 ( 2008-01-28)
Abstract:
We report a comparative investigation of the magnetic response of long channel AlGaN∕AlN∕GaN heterostructures (Hall-field effect transistor devices) grown on three different semi-insulating templates on silicon and sapphire. From Hall effect measurements conducted up to 573K (300°C), we find that some of these specific devices can be used as magnetic sensors in a large temperature range (∼600°C) with a magnetic sensitivity close to 60V∕AT and a small thermal drift. On the best sample, between liquid helium temperature and 300°C, the average value of the thermal drift is only −7ppm∕°C.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2008
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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