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  • American Vacuum Society  (4)
  • 2000-2004  (4)
Type of Medium
Publisher
  • American Vacuum Society  (4)
Language
Years
  • 2000-2004  (4)
Year
Subjects(RVK)
  • 1
    Online Resource
    Online Resource
    American Vacuum Society ; 2003
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 21, No. 6 ( 2003-11-01), p. 2555-2557
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 21, No. 6 ( 2003-11-01), p. 2555-2557
    Abstract: An n-p-n InGaP/GaAs heterojunction bipolar transistor (HBT) using a graded base doping profile has been fabricated by low pressure metalorganic chemical vapor deposition. A current gain of 77 and a base sheet resistance of 251 Ω/sq are achieved in the graded-base HBT. Compared to the graded-base structure, the nongraded-base structure has a lower current gain (68) and a higher base sheet resistance (294 Ω/sq). Furthermore, the studied graded-base HBT device also shows better microwave characteristics. The measured unity current-gain cutoff frequency (fT) can be improved from 18 to 22 GHz. The functional dependences of current gain, base sheet resistance, and microwave characteristics on the base doping profile are attributed to the graded-doping enhanced built-in field across the base and higher base doping at the emitter edge.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2003
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Online Resource
    Online Resource
    American Vacuum Society ; 2004
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 22, No. 3 ( 2004-05-01), p. 1044-1047
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 22, No. 3 ( 2004-05-01), p. 1044-1047
    Abstract: In 0.52 Al 0.48 As/In x Ga 1−x As y P 1−y / In 0.52 Al 0.48 As high electron-mobility transistors with single-channel and triple-channel structures were successfully fabricated by low-pressure metal-organic chemical-vapor deposition. The single-channel structure exhibits higher transconductance and drain-source saturation current than the triple-channel due to the higher average-carrier saturation velocity and sheet-carrier concentration of the In0.53Ga0.47As channel. The triple-channel structure is employed to take advantage of both the high electron mobility of In0.53Ga0.47As and the low ionization coefficient of InP. A third quaternary In0.72Ga0.28As0.61P0.39 (Eg∼0.95 eV) layer is introduced between In0.53Ga0.47As (Eg∼0.75 eV) and InP (Eg∼1.35 eV) channels to improve the electron-transport characteristics. Experimentally, the investigated triple-channel structure exhibits a low leakage current, a high breakdown voltages and a high linear-operation regime.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2004
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Online Resource
    Online Resource
    American Vacuum Society ; 2004
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 22, No. 3 ( 2004-05-01), p. 1244-1249
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 22, No. 3 ( 2004-05-01), p. 1244-1249
    Abstract: Recently, two new CNTs-based triode structures, i.e., under-gate and planar-gate structures, for field emission display were proposed and exhibited good characteristics. In this paper, we will investigate how the current density distributed on anode plate and how the display’s resolution affected by the bias conditions of the emitter and the gate electrode via computer simulation. Our simulation results exhibit that the gate voltage has a strong effect on display’s resolution. For the planar triode structure, the good resolution is achieved when the gate voltage is adjusted to converge the electron beams on an anode plate. For the under-gate structure, the display has a good resolution provided that the gate voltage is not too large to pull the electrons striking on other pixels. In general, the under-gate structure has a wider gate-biased operating condition, but the planar triode structure has a higher light efficiency under the same resolution. Due to the lack of field effect in the y-direction, the spot size of the current density on anode plate looks like strips instead of points. And the resolution of the display will be affected by this factor.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2004
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Library Location Call Number Volume/Issue/Year Availability
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  • 4
    Online Resource
    Online Resource
    American Vacuum Society ; 2004
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 22, No. 3 ( 2004-05-01), p. 974-976
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 22, No. 3 ( 2004-05-01), p. 974-976
    Abstract: An enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real-space transfer high electron mobility transistor (HEMT) was fabricated. The studied device operates as a conventional enhancement-mode HEMT under a low gate electrode bias. As the gate electrode bias increases, the electric field applied between the gate electrode and the InGaAs channel increases and the electrons in the channel become “hot.” If the transverse field is sufficiently large, then the electrons in the InGaAs channel layer may have enough energy to overcome the barrier and tunnel into the gate electrode, thus IDS decreases as IG increases. Therefore, pronounced N-shaped negative differential resistance phenomenon and negative transconductance are observed in the studied device.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2004
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
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