In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 6B ( 2004-06-01), p. L780-
Abstract:
The self-organized GaN dot structure is successfully grown on a slightly lattice-mismatched Al 0.11 Ga 0.89 N epilayer using flow-rate modulation epitaxy (FME) growth technique. From the variation of dot density with growth temperature, we can observe that the GaN dot growth is controlled predominately by the surface diffusion of Ga adatoms at substrate temperatures below 915°C and by re-evaporation at higher temperatures. Because of the special alternating gas supply feature in FME, during the Ga source step, it is the Ga metal that is deposited on the underlying Al 0.11 Ga 0.89 N layer. This is because of the large lattice mismatch of 41.8% between the Ga metal (4.51 Å) and Al 0.11 Ga 0.89 N (3.18 Å). We consider that the GaN dot growth in our study is mainly through the Volmer-Weber growth mode, not the commonly used Stranski-Krastanow growth mode.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.L780
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2004
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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