In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 49, No. 9 ( 2000), p. 1878-
Abstract:
The BaTiO3 thin film was grown epitaxially on SrTiO3(001) substrate by laser molecular beam epitaxy (laser-MBE). The film growth process w as monitored by in situ reflection high-energy electron diffraction (RHEED), the regular RHEED intensity oscillation from the 0th-Bragg reflection shows an unit cell layer-by-layer growth mode. The crystalline structure and the surface morp hology of the laser-MBE BaTiO3 film were characterized by X-ray diffr action (XRD) and by atomic force microscopy (AFM), respectively. The XRD and AFM results show that laser-MBE BaTiO3 film exhibit the tetragonal c-axi s oriented structure and an atomically smooth surface with a root mean square su rface roughness of 016nm. The topmost surface of the film was studied by angl e-resolved X-ray photoelectron spectroscopy (ARXPS), indicating the laser-MBE Ba TiO3 film is predominantly terminated with TiO2 atomic pla ne. The topmost surface of laser-ablated BaTiO3 film was also analyze d. The film growth mechanism was investigated in atomic scale.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2000
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