In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 786 ( 2003)
Abstract:
Thin HfAlO x films grown on SiON(0.9 nm)/Si by atomic layer deposition technique were characterized by using monoenergetic positron beams. The lifetimes of positrons in the HfAlO x film after post-deposition annealing (PDA) ranged between 412–403 ps. Since these lifetimes were longer than the lifetime of positrons trapped by point defects in metal oxides, such as LaCoO 3 , PbTiO 3 , and BaTiO 3 , the positrons in HfAlO x films were considered to annihilate from the trapped state by open spaces which exist intrinsically in their amorphous structure. The line-shape parameter S of the Doppler broadening spectrum corresponding to the annihilation of positrons in HfAlO x films decreased by PDA, and the S value decreased with increasing an O 2 -content in an atmosphere during PDA (0.004–1%). The observed behavior of the S value was attributed to the shrinkage of the open spaces due to the change in the matrix structure of HfAlO x . After P + - and B + -implantation into poly-Si films grown on the HfAlO x films, the diffusion of positrons in the Si substrates toward the HfAlO x film was suppressed. This fact was attributed to positive charges introduced near the HfAlO x films.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-786-E1.2
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2003
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