In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 45, No. 1 ( 1996), p. 94-
Abstract:
The behaviour of the fractal crystallization in Pd, Ge thin film system of various ratios of thickness (or composition) after annealing have been investigated by transmission electron microscopy (TEM). It was difficult for the coevaporated Pd-Ge films to realize the fractal crystallization. The production of the fractal structure in Pd/a-Ge bilayers was easier than that in a-Ge/Pd bilayers. The fractal crystallizations were restrainted because of the formation of the compounds (Pd2Ge and PdGe) in Pd, Ge bilayers. The growting of the fractal struc ture depends on the competition of the two precesses of a-Ge crystallization and compound formation.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
1996
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