In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 2A ( 1997-02-01), p. L154-
Abstract:
Ti thin films have been grown on SiO 2 glass layers at 350°C by ultrahigh vacuum magnetron sputtering with a small amount of H 2 O, H 2 or O 2 gas introduction to investigate the influence of adsorption on the crystallographic orientation of the Ti films. In situ reflection high-energy electron diffraction (RHEED) and ex situ X-ray diffraction (XRD) studies showed that a water vapor introduction at the beginning of sputter deposition promotes a highly preferred (002) orientation, whereas H 2 gas or O 2 gas introduction does not affect the orientation. These results indicate that the increase of water chemisorption on the substrate by H 2 O gas introduction and reduction of the surface free energy enhance the self-assembly of the Ti atoms toward the most stable C-axis orientation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.L154
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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