In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 12R ( 1997-12-01), p. 7323-
Abstract:
We precisely measure the depth profiles of 50–200 keV 18 O + implanted into Si and
SiO 2 by secondary ion mass spectrometry (SIMS) and then best-fit the on. The O-profiles derived from the RBS
analysis are compared with those calculated by the extended TRIM. The present analysis revealed that the O-atoms implanted at 550° C migrated toward the surface before reaching
the stoichiometry ( SiO 2 ). The diffusion coefficient was estimated to be about 1×10 -14 cm 2 / s, which was about 2 orders of magnitude larger than the value for 16 O in crystalline Si
at 550° C. This is possibly due to the induced dense defects distributed from the mean depth of 16 O toward the surface (enhanced diffusion).
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.7323
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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