In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 358 ( 1994)
Kurzfassung:
Microcrystalline β-SiC films were deposited on silicon substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at 500°C utilizing a SiH 4 -CH 4 -H 2 gas mixture. The effects of two important parameters on film growth, SiH 4 /CH 4 flow ratio and microwave (MW) power, were investigated using X-ray photoelectron spectroscopy (XPS) along with the Fourier transform infrared spectra (FTIR). Results showed that the optimum flow ratio is about 0.5. Under the optimum flow ratio, a large MW power is favorable for the growth of high quality films with an ideal film stoichiometry. Surface morphology inspected by the contact mode atomic force microscopy (AFM) reveals that high MW powers not only improve the film crystallinity but also increase its surface roughness as well.
Materialart:
Online-Ressource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-358-799
Sprache:
Englisch
Verlag:
Springer Science and Business Media LLC
Publikationsdatum:
1994
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