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  • 1990-1994  (5)
  • 1
    Online Resource
    Online Resource
    Wiley ; 1994
    In:  Crystal Research and Technology Vol. 29, No. 6 ( 1994), p. 837-842
    In: Crystal Research and Technology, Wiley, Vol. 29, No. 6 ( 1994), p. 837-842
    Type of Medium: Online Resource
    ISSN: 0232-1300 , 1521-4079
    URL: Issue
    RVK:
    Language: English
    Publisher: Wiley
    Publication Date: 1994
    detail.hit.zdb_id: 1480828-6
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Online Resource
    Online Resource
    American Vacuum Society ; 1994
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 12, No. 5 ( 1994-09-01), p. 2952-2962
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 12, No. 5 ( 1994-09-01), p. 2952-2962
    Abstract: This article describes an investigation of the etching of polysilicon in a CF4/O2 plasma. The ‘‘undercut’’ observed in etch profiles is related to the surface transport of reaction precursors. The possible mechanisms for this transport include surface re-emission and surface diffusion of the precursors. Simulations of profile evolution, conducted with both mechanisms, are compared with experimental results. The surface reemission simulations are found to predict experimental profile evolution accurately, whereas surface diffusion simulations require unphysical values for the surface diffusion length. Novel test structures have been fabricated and etched under the same conditions as used for trench etching. Surface re-emission simulations accurately predict the etch rate deep inside the shadowed cavity of different structures. On the other hand, simulations assuming surface diffusion to be dominant do not capture even the qualitative trends in test structure etching. This is strong evidence that surface re-emission is the dominant mechanism for transport of etch precursors in CF4/O2 plasmas.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1994
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 3
    Online Resource
    Online Resource
    American Vacuum Society ; 1993
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 11, No. 3 ( 1993-05-01), p. 557-568
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 11, No. 3 ( 1993-05-01), p. 557-568
    Abstract: For films deposited by low pressure chemical vapor deposition (LPCVD) the effect of roughness in the underlying substrate on film microstructure is investigated by computer simulation. Previous workers have assumed a normal surface velocity related to the local surface curvature; however, transport in many LPCVD systems has been shown to be governed by surface re-emission of the deposition precursors with a single sticking coefficient. In this article, the dependence of film profile evolution on both the sticking coefficient of the precursors, as well as the wave number of the underlying roughness is demonstrated. All wave numbers are shown to grow in the small time regime, for all values of the sticking coefficient except zero. At longer times, the mechanism of cusp formation is shown to arrest this growth for small but finite values of the sticking coefficient. In the limit that the sticking coefficient approaches zero, a simple geometric model for profile evolution is developed to accurately predict both the time required for cusp formation, as well as the maximum rate of decay of roughness. All wave numbers grow for large values of the sticking coefficient, eventually leading to the formation of a columnar microstructure with voids. For the sticking coefficient equal to unity, small geometric perturbations on the starting surface are shown to grow into asymptotic columns. Pair interactions between adjacent, unequal perturbations are studied, and larger columns are found to ‘‘shadow’’ smaller columns. For low values of the sticking coefficient, these interactions result in slowing down the decay of surface roughness by an effective halving of the wave number. The conclusions obtained from simulating deposition on periodic, sinusoidal surfaces are shown to be useful in understanding deposition on statistically rough surfaces.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1993
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 4
    Online Resource
    Online Resource
    American Vacuum Society ; 1992
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 10, No. 3 ( 1992-05-01), p. 1091-1104
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 10, No. 3 ( 1992-05-01), p. 1091-1104
    Abstract: This article describes a model that simulates etching profiles in reactive ion etching. In particular, models are developed to explain the significant lateral etch rate that is observed in many etch profiles. The total etch rate is considered to consist of two superimposed components: an ion-assisted rate and a purely ‘‘chemical’’ etch rate, the latter rate being due to etching by radicals in the absence of ion bombardment. The transport of radicals to the evolving interface is studied for two different transport mechanisms: re-emission from the surface and diffusion along the surface. For the case of transport by surface re-emission, a reactive sticking coefficient is defined for the radicals, and a formulation is developed to simulate etching for any value (between zero and unity) that this sticking coefficient may assume. When the sticking coefficient approaches either zero or unity, the method of characteristics is shown to be useful for profile simulation. Transport of radicals by surface diffusion is also investigated, and it is shown that the important dimensionless parameter governing profile evolution is the Damkohler number. The two models are compared to experiments performed on the etching of silicon in a SF6 plasma, and the surface re-emission model is shown to accurately predict the development of etching profiles.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1992
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 5
    Online Resource
    Online Resource
    Springer Science and Business Media LLC ; 1990
    In:  Bulletin of Environmental Contamination and Toxicology Vol. 44, No. 6 ( 1990-6), p. 865-870
    In: Bulletin of Environmental Contamination and Toxicology, Springer Science and Business Media LLC, Vol. 44, No. 6 ( 1990-6), p. 865-870
    Type of Medium: Online Resource
    ISSN: 0007-4861 , 1432-0800
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1990
    detail.hit.zdb_id: 1458480-3
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