In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, Vol. 6, No. 1 ( 1988-01-01), p. 34-36
Abstract:
The lattice mismatch and the half-width of the rocking curves in GaInAsP epitaxial layers grown on (001) InP substrates have been determined by means of x-ray double-crystal diffractometry. The state of strain of GaInAsP epitaxial layers has also been investigated. The relaxed lattice constant of the epilayers in stress-free states has been found from observed lattice deformation using strain relations.
Type of Medium:
Online Resource
ISSN:
0734-211X
,
2327-9877
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1988
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
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