In:
Journal of Applied Physics, AIP Publishing, Vol. 54, No. 11 ( 1983-11-01), p. 6417-6420
Abstract:
Deep impurity levels due to ion-implanted tellurium in n–silicon are studied. Two donor levels at Ec−0.13 and Ec−0.56 eV are obtained using deep level transient spectroscopy. Thermal electron capture cross sections for both levels are too large to be measured. Electron photoionization cross section spectrum confirms the Ec−0.56 level and also reveals an excited state 0.45 eV above the ground state.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1983
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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